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Precision measurement of the quantized anomalous Hall resistance at zero magnetic field
Applied Physics Letters ( IF 4 ) Pub Date : 2018-02-12 , DOI: 10.1063/1.5009718
Martin Götz 1 , Kajetan M. Fijalkowski 2, 3 , Eckart Pesel 1 , Matthias Hartl 2, 3 , Steffen Schreyeck 2, 3 , Martin Winnerlein 2, 3 , Stefan Grauer 2, 3 , Hansjörg Scherer 1 , Karl Brunner 2, 3 , Charles Gould 2, 3 , Franz J. Ahlers 1 , Laurens W. Molenkamp 2, 3
Affiliation  

In the quantum anomalous Hall effect, the edge states of a ferromagnetically doped topological insulator exhibit quantized Hall resistance and dissipationless transport at zero magnetic field. Up to now, however, the resistance was experimentally assessed using standard transport measurement techniques which are difficult to trace to the von-Klitzing constant RK with high precision. Here, we present a metrologically comprehensive measurement, including a full uncertainty budget, of the resistance quantization of V-doped (Bi,Sb)2Te3 devices without the external magnetic field. For the deviation of the quantized anomalous Hall resistance from RK, we determined a value of 0.17 ± 0.25 ppm, the smallest and most precise value reported to date. This is a step towards realization of a practical zero-field quantum resistance standard which in combination with the Josephson effect could provide the universal quantum units standard in the future.In the quantum anomalous Hall effect, the edge states of a ferromagnetically doped topological insulator exhibit quantized Hall resistance and dissipationless transport at zero magnetic field. Up to now, however, the resistance was experimentally assessed using standard transport measurement techniques which are difficult to trace to the von-Klitzing constant RK with high precision. Here, we present a metrologically comprehensive measurement, including a full uncertainty budget, of the resistance quantization of V-doped (Bi,Sb)2Te3 devices without the external magnetic field. For the deviation of the quantized anomalous Hall resistance from RK, we determined a value of 0.17 ± 0.25 ppm, the smallest and most precise value reported to date. This is a step towards realization of a practical zero-field quantum resistance standard which in combination with the Josephson effect could provide the universal quantum units standard in the future.

中文翻译:

零磁场下量化异常霍尔电阻的精确测量

在量子反常霍尔效应中,铁磁掺杂拓扑绝缘体的边缘态在零磁场下表现出量子化的霍尔电阻和无耗散传输。然而,到目前为止,电阻是使用标准传输测量技术进行实验评估的,这些技术难以高精度追踪到冯-克利津常数 RK。在这里,我们提出了一个计量学上的综合测量,包括一个完整的不确定性预算,在没有外部磁场的情况下 V 掺杂的 (Bi,Sb)2Te3 器件的电阻量化。对于量化异常霍尔电阻与 RK 的偏差,我们确定了 0.17 ± 0.25 ppm 的值,这是迄今为止报告的最小和最精确的值。这是实现实用的零场量子电阻标准的一步,结合约瑟夫森效应可以在未来提供通用量子单位标准。 在量子反常霍尔效应中,铁磁掺杂拓扑绝缘体的边缘态表现出量子化霍尔电阻和零磁场下的无耗散传输。然而,到目前为止,电阻是使用标准传输测量技术进行实验评估的,这些技术难以高精度追踪到冯-克利津常数 RK。在这里,我们提出了一个计量学上的综合测量,包括一个完整的不确定性预算,在没有外部磁场的情况下 V 掺杂的 (Bi,Sb)2Te3 器件的电阻量化。对于量化异常霍尔电阻与 RK 的偏差,我们确定了一个 0.17 ± 0.25 ppm 的值,这是迄今为止报告的最小和最精确的值。这是实现实用的零场量子电阻标准的一步,结合约瑟夫森效应可以在未来提供通用的量子单元标准。
更新日期:2018-02-12
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