This paper proposes the adoption of the inherent emitter stray inductance $L_{{\rm{eE}}}$ in high-power insulated gate bipolar transistor modules as a new dynamic thermo-sensitive electrical parameter (d-TSEP). Furthermore, a family of 14 derived dynamic TSEP candidates has been extracted and classified in voltage-based, time-based and charge-based TSEPs. Accordingly, the perspectives and the implementation challenges of the proposed method are discussed and summarized. Finally, high-power test platforms are designed and adopted to experimentally verify the theoretical analysis.

中文翻译：

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借助大功率 IGBT 模块中的发射极杂散电感，通过集电极侧热敏电参数实现结温估算

本文提出采用固有发射极杂散电感 $L_{{\rm{eE}}}$在大功率绝缘栅双极晶体管模块中作为新的动态热敏电参数 (d-TSEP)。此外，还提取了 14 个衍生的动态 TSEP 候选，并将其分类为基于电压、基于时间和基于电荷的 TSEP。因此，讨论和总结了所提出方法的观点和实施挑战。最后，设计并采用大功率测试平台对理论分析进行实验验证。