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Scalable and clean exfoliation of graphitic carbon nitride in NaClO solution: enriched surface active sites for enhanced photocatalytic H2 evolution
Green Chemistry ( IF 9.8 ) Pub Date : 2018-02-12 00:00:00 , DOI: 10.1039/c7gc03704j
Lifeng Cui 1, 2, 3, 4 , Yanfei Liu 1, 2, 3, 4 , Xueyou Fang 1, 2, 3, 4 , Chaochuang Yin 1, 2, 3, 4 , Shasha Li 1, 2, 3, 4 , Di Sun 3, 4, 5, 6 , Shifei Kang 1, 2, 3, 4
Affiliation  

Graphitic carbon nitride (g-C3N4) has attracted wide attention as a promising visible-light-driven metal-free semiconductor photocatalyst. The transportation and transformation of photogenerated carriers during the photocatalytic process of g-C3N4 are restricted by the insufficient surface active sites and low charge separation efficiency. As a top-down strategy, the exfoliation of layer-stacked bulk g-C3N4 into nanosheets is widely recognized as an applicable route, yet still challenging in terms of scalable and clean synthesis. Herein, this challenge was tackled via a simple hydrothermal method in NaClO solution, in which the synergetic effect of alkaline metal ion intercalation and the oxidative exfoliation of bulk g-C3N4 was involved. Highly active g-C3N4 nanosheets were easily made in the laboratory in tens of grams and this simple process could readily be extended to the scale of kilograms. The hydrothermal treatment created vertical channels for directional electron transfer and obtained ultrathin holey g-C3N4 nanosheets with remarkable hierarchical porosity and good hydrophilicity. The holey g-C3N4 nanosheets exhibit a high specific surface area (170.7 m2 g−1), a narrow band gap (2.55 eV), a large number of exposed edges, and superior electron transport ability. These holey g-C3N4 nanosheets have an average H2 evolution rate 9 times that of bulk g-C3N4. This green, facile and scalable method to synthesize few-layer g-C3N4 nanosheets affords a new strategy to design and fabricate other functional 2D materials.

中文翻译:

石墨氮化碳中的NaClO溶液的可扩展性和干净剥离:用于增强的光催化ħ富化的表面活性位点2进化

石墨化的氮化碳(gC 3 N 4)作为一种有前途的可见光驱动的无金属半导体光催化剂受到了广泛的关注。在gC 3 N 4的光催化过程中,光生载流子的运输和转化受到表面活性中心不足和电荷分离效率低的限制。作为一种自上而下的策略,将层堆叠的块状gC 3 N 4剥离到纳米片中是公认的适用方法,但在可扩展性和清洁合成方面仍然具有挑战性。在这里,这个挑战是通过以下方式解决的一种简单的在NaClO溶液中的水热方法,其中涉及碱金属离子嵌入和块状gC 3 N 4的氧化剥离的协同作用。高活性的gC 3 N 4纳米片很容易在实验室中制成数十克,并且这种简单的过程可以很容易地扩展到千克规模。水热处理产生了用于定向电子转移的垂直通道,并获得了具有显着的分级孔隙率和良好的亲水性的超薄多孔gC 3 N 4纳米片。有孔的gC 3 N 4纳米片表现出高的比表面积(170.7 m 2 g-1),窄的带隙(2.55 eV),大量的暴露边缘和优异的电子传输能力。这些有孔的gC 3 N 4纳米片的平均H 2析出速率是块状gC 3 N 4的9倍。这种绿色,便捷,可扩展的合成几层gC 3 N 4纳米片的方法为设计和制造其他功能性2D材料提供了新的策略。
更新日期:2018-03-20
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