Resistance modulation of 2D electron gas (2DEG) at oxide heterointerfaces has recently attracted extensive interests in nonvolatile memory and various sensors. Specially, ferroelectric devices based on 2DEG resistance switching at oxide heterointerfaces by ferroelectric polarization are particularly important in memory and light sensors. Herein, a nonvolatile ferroelectric memristor is reported by the 2DEG resistance change at an LaAlO₃/SrTiO₃ heterointerface by switching the ferroelectric polarization of a BiFeO₃ layer, showing reversible two order of magnitude resistance change, the largest switching ratio in free‐lead ferroelectric memristors so far. The mechanisms of the 2DEG reversible resistance switching at the LaAlO₃/SrTiO₃ heterointerfaces modulated by the ferroelectric polarization and light illumination are discussed. These findings demonstrate a practical approach for the nonvolatile memory and sensor applications using the 2DEG resistance switching by the ferroelectric polarization and light illumination.

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LaAlO3 / SrTiO3异质界面上二维电子气的可逆电阻转换

氧化物异质界面处的2D电子气（2DEG）的电阻调制最近在非易失性存储器和各种传感器中引起了广泛的兴趣。特别地，在存储器和光传感器中，基于通过铁电极化在氧化物异质界面处的2DEG电阻切换的铁电器件特别重要。在本文中，通过切换BiFeO ₃层的铁电极化，通过在LaAlO ₃ / SrTiO ₃异质界面处的2DEG电阻变化报告了非易失性铁电忆阻器，显示出可逆的两个数量级的电阻变化，这是自由铅铁电介质中最大的开关比迄今为止的忆阻器。LaAlO ₃ / SrTiO上2DEG可逆电阻转换的机理讨论了由铁电极化和光照明调制的_3个异质界面。这些发现证明了通过铁电极化和光照明使用2DEG电阻切换的非易失性存储器和传感器应用的实用方法。