Processing of Ti_1−xAl_xN thin films by the reactive chemical vapor deposition (R-CVD) technique has been performed from the reaction between a titanium tetrachloride (TiCl₄–H₂) gas mixture and (0001) c-plane monocrystalline aluminium nitride (AlN) films at high temperatures, in the 800–1200 °C range. As a typical result, the growth of epitaxial 70 nm thick layers of (111)-fcc Ti_1−xAl_xN (0.05 = x = 0.65) has been processed. Multicomponent mass transport and diffusion modelling is proposed to assess the experimental results. A good agreement is found between the experimental thickness of the transformed zones and the calculated titanium diffusion length in AlN. Fcc-Ti_1−xAl_xN phase formation can be regarded as a diffusion-controlled mechanism. The novel experimental methodology developed in this work could help in understanding the complex formation and stability of this technologically important material.

中文翻译：

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异质外延Ti _{1- x} Al _x N薄膜的反应性化学气相沉积†

由四氯化钛（TiCl ₄ –H ₂）气体混合物与（0001）c平面单晶之间的反应进行了反应化学气相沉积（R-CVD）技术对Ti _{1- x} Al _x N薄膜的处理在800–1200°C的高温下氮化铝（AlN）膜。典型结果是（111）-fcc Ti _{1- x} Al _x N（0.05 = x= 0.65）已处理。提出了多组分传质和扩散模型来评估实验结果。在相变区的实验厚度与AlN中计算出的钛扩散长度之间找到了很好的一致性。Fcc-Ti ₁ - _x Al _x N相的形成可以看作是扩散控制的机制。在这项工作中开发的新颖的实验方法可以帮助理解这种技术上重要的材料的复杂形成和稳定性。