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Low‐Voltage, Optoelectronic CH3NH3PbI3−xClx Memory with Integrated Sensing and Logic Operations
Advanced Functional Materials ( IF 19.0 ) Pub Date : 2018-02-12 , DOI: 10.1002/adfm.201800080
Feichi Zhou 1 , Yanghui Liu 1 , Xinpeng Shen 1 , Mengye Wang 1 , Fang Yuan 1 , Yang Chai 1
Affiliation  

Nonvolatile optoelectronic memories integrated with the functions of sensing, data storage, and data processing are promising for the potential Internet of things (IoT) applications. To meet the requirements of IoT devices, multifunctional memory devices with low power consumption and secure data storage are highly desirable. This study demonstrates an optoelectronic resistive switching memory integrated with sensing and logic operations by adopting organic–inorganic hybrid CH3NH3PbI3−xClx perovskites, which possess unusual defect physics and excellent light absorption. The CH3NH3PbI3−xClx cell exhibits low operation voltage of 0.1 V with the assistance of light illumination, long‐term retention property, and multiple resistance states. Its unique optoelectronic characteristics enable to perform logic operation for inputting one electrical pulse and one optical signal, and detect the coincidence of electrical and optical signal as well. This design provides possibilities for smart sensor in IoT application.

中文翻译:

具有集成感应和逻辑运算功能的低压光电CH3NH3PbI3-xClx存储器

集成了传感,数据存储和数据处理功能的非易失性光电存储器对于潜在的物联网(IoT)应用程序很有希望。为了满足IoT设备的需求,非常需要具有低功耗和安全数据存储的多功能存储设备。这项研究演示了采用有机-无机杂化CH 3 NH 3 PbI 3− x Cl x钙钛矿形成的,集成了感测和逻辑运算的光电电阻开关存储器,该器件具有异常的物理缺陷和出色的光吸收性能。CH 3 NH 3 PbI 3− x Cl x借助照明,长期保持特性和多种电阻状态,该电池表现出0.1 V的低工作电压。其独特的光电特性使它能够执行逻辑操作,以输入一个电脉冲和一个光信号,并检测电和光信号的一致性。这种设计为物联网应用中的智能传感器提供了可能性。
更新日期:2018-02-12
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