Abstract Improved quality of gas source molecular beam epitaxy grown In 0.83 Ga 0.17 As layer on GaAs substrate was achieved by adopting a two-step In x Al 1−x As metamorphic buffer at different temperatures. With a high-temperature In 0.83 Al 0.17 As template following a low-temperature composition continuously graded In x Al 1−x As (x = 0.05–0.86) buffer, better structural, optical and electrical properties of succeeding In 0.83 Ga 0.17 As were confirmed by atomic force microscopy, photoluminescence and Hall-effect measurements. Cross-sectional transmission electron microscopy revealed significant effect of the two-step temperature grown InAlAs buffer layers on the inhibition of threading dislocations due to the deposition of high density nuclei on GaAs substrate at the low growth temperature. The limited reduction for the dark current of GaAs-based In 0.83 Ga 0.17 As photodetectors on the two-step temperature grown In x Al 1−x As buffer layers was ascribed to the contribution of impurities caused by the low growth temperature of InAlAs buffers.

中文翻译：

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GaAs 基 In 0.83 Ga 0.17 As 在 In x Al 1-x As 缓冲液上的生长温度优化

摘要 通过在不同温度下采用两步In x Al 1-x As 变质缓冲液，提高了气源分子束外延在GaAs 衬底上生长的In 0.83 Ga 0.17 As 层的质量。使用高温 In 0.83 Al 0.17 As 模板遵循低温成分连续渐变的 In x Al 1-x As (x = 0.05–0.86) 缓冲液，后续的 In 0.83 Ga 0.17 As 具有更好的结构、光学和电学性能通过原子力显微镜、光致发光和霍尔效应测量证实。横截面透射电子显微镜揭示了两步温度生长的 InAlAs 缓冲层对抑制螺纹位错的显着影响，这是由于在低生长温度下在 GaAs 衬底上沉积高密度核。