Abstract We investigate the properties of an electron selective front contact based on a phosphorous doped mixed-phase SiO x /Si layer stack at device level. The addition of the SiO x phase to the Si layer targets reduced optical absorption, pursuing the goal of a broad-band transparent full-area passivating contact for front-side application. To demonstrate the validity of our approach we realised a planar hybrid solar cell with the mixed-phase SiO x /Si-based passivating contact on the front side and a hydrogenated amorphous (i/p) silicon heterojunction as rear hole-selective contact. With this structure, we obtained a V OC of 691 mV, a J SC of 33.9 mA/ cm 2 , a fill factor of 79.4% and an efficiency of 18.6% on a planar n-type FZ Si-wafer. Temperature-dependent IV -measurements at solar cell level were performed in order to understand the physical mechanisms behind charge carrier transport and surface passivation of the mixed-phase SiO x /Si layer stack. The results were compared to those of a standard silicon heterojunction (SHJ) cell on a similar planar substrate. The temperature dependence of the IV -curves in the range from –100°C to +75°C reveals that the hybrid cell is less temperature sensitive with respect to the SHJ cell. Furthermore, at low temperatures, the analysis reveals a reduction of the V OC temperature coefficient of the hybrid cell, whereas for the SHJ cell a saturation occurs. This behaviour hints that the barrier imposed by the SiO x /Si-based contact is less pronounced than the barrier imposed by a standard SHJ contact.

中文翻译：

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硅太阳能电池混合相氧化硅基钝化触点的特性

摘要 我们在器件级研究了基于磷掺杂混合相 SiO x /Si 层堆叠的电子选择性前接触的特性。将 SiO x 相添加到 Si 层的目标是减少光吸收，追求用于正面应用的宽带透明全区域钝化接触的目标。为了证明我们的方法的有效性，我们实现了一种平面混合太阳能电池，其正面具有混合相 SiO x /Si 基钝化触点，氢化非晶 (i/p) 硅异质结作为背面空穴选择性触点。通过这种结构，我们在平面 n 型 FZ 硅晶片上获得了 691 mV 的 VOC、33.9 mA/cm 2 的 J SC、79.4% 的填充因子和 18.6% 的效率。进行了太阳能电池级的温度相关 IV 测量，以了解电荷载流子传输和混合相 SiO x /Si 层堆叠的表面钝化背后的物理机制。将结果与类似平面基板上的标准硅异质结 (SHJ) 电池的结果进行比较。IV 曲线在 –100°C 至 +75°C 范围内的温度依赖性表明，混合电池相对于 SHJ 电池的温度敏感性较低。此外，在低温下，分析显示混合电池的 V OC 温度系数降低，而对于 SHJ 电池会发生饱和。这种行为暗示 SiO x /Si 基接触施加的势垒不如标准 SHJ 接触施加的势垒那么明显。