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The growth and investigations of electromechanical properties of Fresnoite Ba 2 Si 2 TiO 8 crystal as a function of orientation
Journal of Crystal Growth ( IF 1.8 ) Pub Date : 2018-04-01 , DOI: 10.1016/j.jcrysgro.2018.02.003
Chuanying Shen , Duanliang Wang , Jinyue Zhang , Huaijin Zhang , Jiyang Wang , Robert I. Boughton

Abstract Large sized Fresnoite Ba 2 TiSi 2 O 8 single crystals were grown by the Czochralski method. Using coordinate transformation methods, the relative dielectric, piezoelectric and elastic constants of Fresnoite Ba 2 TiSi 2 O 8 as a function of orientation were investigated, and their two- and three-dimensional spatial distributions are presented. From them, the maximum values of the piezoelectric coefficients and the corresponding rotation angle can be obtained. The maximum values of coefficients d 22 ∗ , d 23 ∗ , d 24 , ∗ d 32 ∗ , d 33 ∗ and d 34 ∗ were achieved for rotation angles of 40°, 32°, 0°, 58°, 50° and 90°, respectively, and are on the order of 8.7, −4.7, 17.5, 4.7, 8.7 and 17.5 pC/N, respectively. Furthermore, the validity of the electromechanical properties investigation as a function of orientation was verified. The relative dielectric permittivity, elastic constant and piezoelectric coefficient of a ZXl50 o cut rod were calculated and found to be 14.1, 8.7 pC/N and 11.2 pm 2 /N, respectively, in good agreement with the experimental values of 12.7, 9.1 pC/N and 11.7 pm 2 /N. This investigation is important in providing direction for theoretical research and device design of piezoelectric Ba 2 TiSi 2 O 8 crystals.

中文翻译:

Fresnoite Ba 2 Si 2 TiO 8 晶体的生长和机电性能随取向变化的研究

摘要 采用直拉法生长了大尺寸Fresnoite Ba 2 TiSi 2 O 8 单晶。使用坐标变换方法,研究了作为取向函数的 Fresnoite Ba 2 TiSi 2 O 8 的相对介电常数、压电常数和弹性常数,并给出了它们的二维和三维空间分布。从中可以得到压电系数的最大值和相应的旋转角度。系数 d 22 ∗ , d 23 ∗ , d 24 , ∗ d 32 ∗ , d 33 ∗ 和 d 34 ∗ 的最大值是针对 40°、32°、0°、58°、50° 和 90 度的旋转角度实现的°,分别为 8.7、-4.7、17.5、4.7、8.7 和 17.5 pC/N。此外,验证了作为取向函数的机电特性研究的有效性。计算了ZXl50 o切割棒的相对介电常数、弹性常数和压电系数,发现分别为14.1、8.7 pC/N和11.2 pm 2 /N,与实验值12.7、9.1 pC/N非常吻合。 N 和 11.7 pm 2 /N。该研究为压电Ba 2 TiSi 2 O 8 晶体的理论研究和器件设计提供了重要方向。
更新日期:2018-04-01
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