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Ultra-thin nanocrystalline n-type silicon oxide front contact layers for rear-emitter silicon heterojunction solar cells
Solar Energy Materials and Solar Cells ( IF 6.9 ) Pub Date : 2018-06-01 , DOI: 10.1016/j.solmat.2018.01.034
L. Mazzarella , A.B. Morales-Vilches , L. Korte , R. Schlatmann , B. Stannowski

Abstract Hydrogenated nanocrystalline silicon oxide (nc-SiOx:H) films have demonstrated a unique combination of low parasitic absorption and high conductivity. Here, we report on the use of n-type nc-SiOx:H as front surface field (FSF) in rear-emitter silicon heterojunction (SHJ) solar cells exhibiting excellent electrical cell parameters at a thickness down to only 5 nm. Using a seed layer, we are able to maintain excellent electrical performance (high fill factor (FF) and open circuit voltage (VOC)), while enhancing layer transparency for maximizing short circuit current (JSC). These results, together with the short deposition time (

中文翻译:

用于背面发射硅异质结太阳能电池的超薄纳米晶 n 型氧化硅前接触层

摘要 氢化纳米晶氧化硅 (nc-SiOx:H) 薄膜表现出低寄生吸收和高电导率的独特组合。在这里,我们报告了在后发射极硅异质结 (SHJ) 太阳能电池中使用 n 型 nc-SiOx:H 作为前表面场 (FSF),在厚度低至仅 5 nm 的情况下表现出出色的电池参数。使用种子层,我们能够保持出色的电气性能(高填充因子 (FF) 和开路电压 (VOC)),同时增强层透明度以最大化短路电流 (JSC)。这些结果,连同较短的沉积时间(
更新日期:2018-06-01
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