Abstract This paper reports on the development of an innovative back-contacted crystalline silicon solar cell with passivating contacts featuring an interband tunnel junction at its electron-collecting contacts. In this novel architecture, named “tunnel-IBC”, both the hole collector patterning and its alignment to the electron collector are eliminated, thus drastically simplifying the process flow. However, two prerequisites have to be fulfilled for such devices to work efficiently, namely (i) lossless carrier transport through the tunnel junction and (ii) low lateral conductance within the hole collector in order to avoid shunts with the neighboring electron-collecting regions. We meet these two contrasting requirements by exploiting the anisotropic and substrate-dependent growth mechanism of n- and p-type hydrogenated nano-crystalline silicon layers. We investigate the influence of the deposition temperature and the doping gas concentration on the structural and the selectivity properties of these layers. Eventually, tunnel-IBC devices integrating hydrogenated nano-crystalline silicon layers demonstrate a conversion efficiency up to 23.9%.

中文翻译：

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叉指背接触硅异质结太阳能电池具有带间隧道结，可简化处理

摘要 本文报道了一种创新的背接触晶体硅太阳能电池的开发，该电池具有钝化触点，其电子收集触点具有带间隧道结。在这种名为“隧道-IBC”的新型架构中，空穴收集器图案化及其与电子收集器的对齐都被消除了，从而大大简化了工艺流程。然而，必须满足两个先决条件才能使此类器件有效工作，即（i）通过隧道结的无损载流子传输和（ii）空穴收集器内的低横向电导以避免与相邻电子收集区域分流。我们通过利用 n 型和 p 型氢化纳米晶硅层的各向异性和衬底依赖性生长机制来满足这两个截然不同的要求。我们研究了沉积温度和掺杂气体浓度对这些层的结构和选择性的影响。最终，集成氢化纳米晶硅层的隧道 IBC 器件的转换效率高达 23.9%。