Under electrical pumping conditions, high-efficiency Si-based near-infrared light generation and amplification on a chip have long been pursued for future optical interconnection technology. However, the overall performance of Si-based near-infrared electroluminescence (EL) devices, including the overall efficiency, turn-on voltage and stability under operational conditions, can rarely meet the requirements of monolithic optoelectronic integration. In this work, we designed a confined crystallization growth strategy for fabricating metal oxide quantum dot (QD) arrays embedded in Si-based films as sensitizers of Er³⁺ ions. Through the precise control of particle size and number density of QD sensitizers, the near-infrared photoluminescence (PL) emission of Er³⁺ ions can be enhanced by more than three orders of magnitude. More significantly, such hierarchical control over the regular arrangement of QD arrays not only considerably enhances the resonance energy transfer efficiency, but also offers an effective conduction path for carrier transport. Therefore, the corresponding near-infrared EL device exhibits a decreased turn-on voltage of 4.5 V, a high external quantum efficiency of 0.7%, and a long operational lifetime of more than 1000 hours, making this device superior to most Si-based on-chip near-infrared EL devices. This well-controlled metal oxide QD array represents an ideal sensitizer to effectively promote the EL emission of rare earth ions and reduce the turn-on voltage. Meanwhile, the analysis of the carrier transport mechanism paves the way for future research into resonance energy transfer under electrical pumping conditions.

中文翻译：

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可调谐量子点阵列作为增强离子近红外电致发光的有效敏化剂†

在电泵浦条件下，对于未来的光学互连技术，人们一直追求在芯片上产生高效的基于Si的近红外光并进行放大。但是，基于硅的近红外电致发光（EL）器件的整体性能，包括整体效率，导通电压和工作条件下的稳定性，几乎无法满足单片光电集成的要求。在这项工作中，我们设计了一种有限的结晶生长策略，用于制造嵌入在基于Si的薄膜中作为Er ³⁺离子敏化剂的金属氧化物量子点（QD）阵列。通过精确控制QD增感剂的粒径和数量密度，可发射Er ³⁺的近红外光致发光（PL）离子可以增强三个以上数量级。更重要的是，这种对QD阵列规则排列的分层控制不仅大大提高了共振能量的传输效率，而且还为载流子传输提供了一条有效的传导路径。因此，相应的近红外EL器件具有降低的4.5 V开启电压，0.7％的高外部量子效率以及超过1000小时的长使用寿命，从而使该器件优于大多数基于Si的器件。芯片近红外EL器件。这种控制良好的金属氧化物QD阵列代表了一种理想的敏化剂，可以有效地促进EL发射稀土离子并降低导通电压。同时，