Transparent conducting oxides (TCOs) are a unique series of materials combining electrical conductivity with optical transparency. Most of the commercially available TCOs are of the n‐type. The performance of p‐type TCOs, however, is far behind their n‐type TCO counterparts primarily due to the doping bottleneck and low hole mobility. Herein, a Mott–Hubbard insulator of LaVO₃ is proposed as the starting point for exploring p‐type TCOs. Substitution of La³⁺ by Sr²⁺ can introduce high hole carrier concentration at the top of the valence band to overcome the doping bottleneck. Combining a modest carrier mobility with weak absorption in the visible region, La_1‐xSr_xVO₃ compounds can serve as new p‐type TCOs and exhibit good balance of the tradeoffs between electrical conductivity and optical transparency. It is demonstrated that La_2/3Sr_1/3VO₃ thin films exhibit a high conductivity of 742.3–872.3 S cm⁻¹ at room temperature and a high transmission of 53.9–70.1% in the visible region, which leads to the highest figure of merit among p‐type TCOs so far.

中文翻译：

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La2 / 3Sr1 / 3VO3薄膜：一种新型的p型透明导电氧化物，具有很高的品质因数

透明导电氧化物（TCO）是将导电性与光学透明性相结合的一系列独特材料。大多数市售的TCO均为n型。但是，由于掺杂瓶颈和低空穴迁移率，p型TCO的性能远远落后于n型TCO。在此，提出了LaVO ₃的Mott-Hubbard绝缘子，作为探索p型TCO的起点。用Sr ²⁺取代La ³⁺可以在价带顶部引入高的空穴载流子浓度，以克服掺杂瓶颈。结合适度的载流子迁移率和可见光区的弱吸收La _{1 x} Sr _x VO ₃这些化合物可以用作新的p型TCO，并在电导率和光学透明性之间取得折中的平衡。结果表明，La _2/3 Sr _1/3 VO ₃薄膜在室温下具有742.3–872.3 S cm ^-1的高电导率，并且在可见光区域具有53.9–70.1％的高透射率，这导致了最高的电导率。到目前为止，p型TCO的优缺点。