Solution processed transparent electrodes are developed combining indium tin oxide nanoparticles (ITO‐NPs) and silver nanowires (Ag NWs) at low process temperature of 100 °C, compatible with solution processed indium gallium zinc oxide (IGZO) thin‐film transistors as source and drain electrodes. Four structures with various stacking of ITO‐NPs and Ag NWs are investigated. Although sole ITO‐NPs cannot provide the conductivity electrical properties of devices, including the mobility, threshold voltage, and subthreshold swing, are improved using ITO‐NPs over/under the Ag NWs. The mobility is enhanced by employing a hybrid electrode structure from 0.004 cm² V⁻¹ s⁻¹ (single layer) to 3.42 cm² V⁻¹ s⁻¹ (triple layer). The ultraviolet photoelectron spectroscopy and UV–vis measurements reveal the electronic structure to confirm the increase of charge carrier concentration at the interface, when ITO‐NP/IGZO heterojunction is formed. The ITO‐NP layer acts as a buffer layer between the IGZO and Ag NWs layer to facilitate charge injection to reduce the contact resistance, while the Ag NWs supply conductivity. These are also confirmed by Hall measurement and contact resistance extraction. Hybrid electrodes developed here are promising approach for solution processed transparent electrodes toward transparent and flexible electronics with advantages of low‐cost process excluding vacuum system.

中文翻译：

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氧化铟锡纳米粒子和银纳米线堆叠电极改善了金属氧化物薄膜晶体管的电荷注入

在100°C的低工艺温度下，开发了结合了铟锡氧化物纳米粒子（ITO-NPs）和银纳米线（Ag NWs）的溶液处理透明电极，与溶液处理的铟镓锌氧化物（IGZO）薄膜晶体管兼容，作为源电极和漏电极。研究了ITO-NP和Ag NW的各种堆叠的四种结构。尽管唯一的ITO-NP无法提供器件的电导率电特性，包括迁移率，阈值电压和亚阈值摆幅，但使用Ag NW上方/下方的ITO-NP可以改善该性能。通过采用从0.004 cm ² V ^-1 s ^-1（单层）到3.42 cm ² V ^-1 s ^-1的混合电极结构来提高迁移率（三层）。形成ITO-NP / IGZO异质结时，紫外光电子能谱和UV-vis测量揭示了电子结构，以确认界面处载流子浓度的增加。ITO-NP层充当IGZO和Ag NWs层之间的缓冲层，以促进电荷注入以降低接触电阻，而Ag NWs提供导电性。这些也通过霍尔测量和接触电阻提取得到证实。此处开发的混合电极是将溶液处理的透明电极应用于透明，柔性电子产品的有前途的方法，其优点是除真空系统外的低成本工艺。