Topological dislocations and stacking faults greatly affect the performance of functional crystalline materials^1,2,3. Layer-stacking domain walls (DWs) in graphene alter its electronic properties and give rise to fascinating new physics such as quantum valley Hall edge states^{4,5,6,7,8,9,10}. Extensive efforts have been dedicated to the engineering of dislocations to obtain materials with advanced properties. However, the manipulation of individual dislocations to precisely control the local structure and local properties of bulk material remains an outstanding challenge. Here we report the manipulation of individual layer-stacking DWs in bi- and trilayer graphene by means of a local mechanical force exerted by an atomic force microscope tip. We demonstrate experimentally the capability to move, erase and split individual DWs as well as annihilate or create closed-loop DWs. We further show that the DW motion is highly anisotropic, offering a simple approach to create solitons with designed atomic structures. Most artificially created DW structures are found to be stable at room temperature.

拓扑位错和堆垛层错极大地影响了功能晶体材料^1,2,3的性能。石墨烯中的层堆叠畴壁（DW）改变了其电子特性，并引发了令人着迷的新物理学，例如量子谷霍尔边缘态^{4,5,6,7,8,9,10}。为了获得具有先进性能的材料，人们一直致力于位错的工程设计。然而，对单个位错的操纵以精确控制散装材料的局部结构和局部性质仍然是一个巨大的挑战。在这里，我们报告通过原子力显微镜尖端施加的局部机械力，对双层和三层石墨烯中的单个堆叠DW进行操纵。我们通过实验证明了移动，擦除和拆分单个DW以及歼灭或创建闭环DW的能力。我们进一步证明DW运动是高度各向异性的，它提供了一种简单的方法来创建具有设计原子结构的孤子。发现大多数人工创建的DW结构在室温下都是稳定的。