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Single step electrodeposition process using ionic liquid to grow highly luminescent silicon/rare earth (Er, Tb) thin films with tunable composition
RSC Advances ( IF 3.9 ) Pub Date : 2018-01-19 00:00:00 , DOI: 10.1039/c7ra11051k
Shibin Thomas 1 , Jeremy Mallet 1 , Hervé Rinnert 2 , Michael Molinari 1
Affiliation  

A one-step method for the electrodeposition of silicon–erbium (Si/Er) and silicon–terbium (Si/Tb) thin films using room temperature ionic liquid (RTIL) has been successfully developed. By playing with the electrochemical parameters, the concentration of incorporated rare earth (RE) ions (Er3+ and Tb3+) in the thin films can be tuned. The obtained thin films have been characterized by electron microscopy and composition analysis techniques. The structural quality of the obtained thin films is characterized by a uniform distribution of Si atoms and RE ions throughout the thickness. The study of the optical properties, carried out by photoluminescence (PL) spectroscopy, demonstrates the efficient optical activity of the films with typical Er and Tb luminescence at room temperature depending on the RE content. The deposition method described is a promising strategy for incorporating RE ions in semiconducting thin films to achieve materials for opto-electronic applications.

中文翻译:

使用离子液体的一步电沉积工艺生长成分可调的高发光硅/稀土(Er、Tb)薄膜

成功开发了一种使用室温离子液体(RTIL)电沉积硅铒(Si/Er)和硅铽(Si/Tb)薄膜的一步法。通过调整电化学参数,可以调节薄膜中掺入的稀土 (RE) 离子(Er 3+和 Tb 3+ )的浓度。所获得的薄膜已通过电子显微镜和成分分析技术进行了表征。所得薄膜的结构质量的特点是硅原子和稀土离子在整个厚度上均匀分布。通过光致发光 (PL) 光谱进行的光学特性研究表明,根据 RE 含量,薄膜在室温下具有典型的 Er 和 Tb 发光的高效光学活性。所描述的沉积方法是将稀土离子掺入半导体薄膜以获得光电应用材料的有前景的策略。
更新日期:2018-01-19
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