In recent years, various van der Waals (vdW) materials have been used in implementing high‐performance photodetectors with high photoresponsivity over a wide detection range. However, in most studies reported so far, photodetection in the infrared (IR) region has not been achieved successfully. Although several vdW materials with narrow bandgaps have been proposed for IR detection, the devices based on these materials exhibit notably low photoresponsivity under IR light illumination. Here, highly efficient near‐infrared (NIR) photodetection based on the interlayer optical transition phenomenon in a vdW heterojunction structure consisting of ReS₂ and ReSe₂ is demonstrated. In addition, by applying the gate‐control function to the two‐terminal vdW heterojunction photodetector, the photoresponsivity is enhanced to 3.64 × 10⁵ A W⁻¹ at λ = 980 nm and 1.58 × 10⁵ A W⁻¹ at λ = 1310 nm. Compared to the values reported for previous vdW photodetectors, these results are the highest levels of photoresponsivity in the NIR range. The study offers a novel device platform for achieving high‐performance IR photodetectors.

中文翻译：

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栅控范德华异质结中交错带隙对准的高效红外光电检测

近年来，各种范德华（vdW）材料已用于实现在宽检测范围内具有高光响应性的高性能光电检测器。但是，到目前为止，在大多数研究报告中，尚未成功实现红外（IR）区域的光电检测。尽管已经提出了几种具有窄带隙的vdW材料用于IR检测，但是基于这些材料的装置在IR光照射下表现出明显低的光响应性。此处，基于由ReS ₂和ReSe ₂组成的vdW异质结结构中的层间光学跃迁现象的高效近红外（NIR）光电检测被证明。此外，通过将栅极控制功能应用于两端vdW异质结光电检测器，在λ= 980 nm时光响应提高到3.64×10 ⁵ AW ^-1，在λ= 1310 nm时光响应提高到1.58×10 ⁵ AW ^-1。与先前的vdW光电探测器报告的值相比，这些结果是NIR范围内最高的光响应度。该研究为实现高性能红外光电探测器提供了一个新颖的设备平台。