Alloyed structures of quantum dot light-harvesting materials favor the suppression of unwanted charge recombination as well as acceleration of the charge extraction and therefore the improvement of photovoltaic performance of the resulting solar cell devices. Herein, the advantages of Zn–Cu–In–S (ZCIS) alloy QD serving as light-harvesting sensitizer materials in the construction of quantum dot-sensitized solar cells (QDSCs) were compared with core/shell structured CIS/ZnS, as well as pristine CIS QDs. The built QDSCs with alloyed Zn–Cu–In–S QDs as photosensitizer achieved an average power conversion efficiency (PCE) of 8.47% (V_oc = 0.613 V, J_sc = 22.62 mA cm⁻², FF = 0.610) under AM 1.5G one sun irradiation, which was enhanced by 21%, and 82% in comparison to those of CIS/ZnS, and CIS based solar cells, respectively. In comparison to cell device assembled by the plain CIS and core/shell structured CIS/ZnS, the enhanced photovoltaic performance in ZCIS QDSCs is mainly ascribed to the faster photon generated electron injection rate from QD into TiO₂ substrate, and the effective restraint of charge recombination, as confirmed by incident photon-to-current conversion efficiency (IPCE), open-circuit voltage decay (OCVD), as well as electrochemical impedance spectroscopy (EIS) measurements.

中文翻译：

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Zn-Cu-In-S 合金量子点在构建量子点敏化太阳能电池中的比较优势†

量子点光捕获材料的合金结构有利于抑制不需要的电荷复合以及加速电荷提取，从而提高所得太阳能电池器件的光伏性能。在此，将 Zn-Cu-In-S (ZCIS) 合金 QD 作为集光敏化材料在构建量子点敏化太阳能电池 (QDSC) 中的优势与核/壳结构的 CIS/ZnS 进行了比较，以及作为原始的 CIS QD。以合金化 Zn-Cu-In-S QDs 作为光敏剂构建的 QDSCs 实现了 8.47% 的平均功率转换效率 (PCE) ( V _oc = 0.613 V, J _sc = 22.62 mA cm ^-2, FF = 0.610) 在 AM 1.5G 一次太阳照射下，与 CIS/ZnS 和 CIS 基太阳能电池相比，分别提高了 21% 和 82%。与由普通 CIS 和核/壳结构 CIS/ZnS 组装的电池器件相比，ZCIS QDSCs 增强的光伏性能主要归因于更快的光子产生的电子从 QD 注入 TiO ₂基板，以及有效抑制电荷重组，如入射光子到电流转换效率 (IPCE)、开路电压衰减 (OCVD) 以及电化学阻抗谱 (EIS) 测量所证实的那样。