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Deep-Ultraviolet AlGaN/AlN Core-Shell Multiple Quantum Wells on AlN Nanorods via Lithography-Free Method.
Scientific Reports ( IF 4.6 ) Pub Date : 2018-01-17 , DOI: 10.1038/s41598-017-19047-6
Jinwan Kim , Uiho Choi , Jaedo Pyeon , Byeongchan So , Okhyun Nam

We report deep ultraviolet (UVC) emitting core-shell-type AlGaN/AlN multiple quantum wells (MQWs) on the AlN nanorods which are prepared by catalyst/lithography free process. The MQWs are grown on AlN nanorods on a sapphire substrate by polarity-selective epitaxy and etching (PSEE) using high-temperature metal organic chemical vapor deposition. The AlN nanorods prepared through PSEE have a low dislocation density because edge dislocations are bent toward neighboring N-polar AlN domains. The core-shell-type MQWs grown on AlN nanorods have three crystallographic orientations, and the final shape of the grown structure is explained by a ball-and-stick model. The photoluminescence (PL) intensity of MQWs grown on AlN nanorods is approximately 40 times higher than that of MQWs simultaneously grown on a planar structure. This result can be explained by increased internal quantum efficiency, large active volume, and increase in light extraction efficiency based on the examination in this study. Among those effects, the increase of active volume on AlN nanorods is considered to be the main reason for the enhancement of the PL intensity.

中文翻译:

通过无光刻法在AlN纳米棒上的深紫外AlGaN / AlN核壳多量子阱。

我们报告在无催化剂/无光刻工艺制备的AlN纳米棒上发射深紫外光(UVC)的核壳型AlGaN / AlN多量子阱(MQWs)。通过使用高温金属有机化学气相沉积的极性选择性外延和蚀刻(PSEE),MQW在蓝宝石衬底上的AlN纳米棒上生长。通过PSEE制备的AlN纳米棒的位错密度低,因为边缘位错向着相邻的N极AlN域弯曲。在AlN纳米棒上生长的核-壳型MQW具有三个晶体学取向,并且通过球棒模型解释了生长结构的最终形状。在AlN纳米棒上生长的MQW的光致发光(PL)强度比同时在平面结构上生长的MQW的光致发光(PL)强度高约40倍。根据本研究的检查结果,可以用内部量子效率提高,有效体积大和光提取效率提高来解释这一结果。在这些效应中,AlN纳米棒上活性体积的增加被认为是增强PL强度的主要原因。
更新日期:2018-01-17
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