We report on the tunable and controlled dielectric properties of iron (Fe)-doped gallium oxide (Ga₂O₃; Ga_1.9Fe_0.1O₃, referred to as GFO) inorganic compounds. The GFO materials were synthesized using a standard high-temperature, solid-state chemical reaction method by varying the thermochemical processing conditions, namely, different calcination and sintering environments. Structural characterization by X-ray diffraction revealed that GFO compounds crystallize in the β-Ga₂O₃ phase. The Fe doping has induced slight lattice strain in GFO, which is evident in structural analysis. The effect of the sintering temperature (T_sint), which was varied in the range of 900–1200 °C, is significant, as revealed by electron microscopy analysis. T_sint influences the grain size and microstructure evolution, which, in turn, influences the dielectric and electrical properties of GFO compounds. The energy-dispersive X-ray spectrometry and mapping data demonstrate the uniform distribution of the elemental composition over the microstructure. The temperature- and frequency-dependent dielectric measurements indicate the characteristic features that are specifically due to Fe doping in Ga₂O₃. The spreading factor and relaxation time, calculated using Cole–Cole plots, are in the ranges of 0.65–0.76 and 10^–4 s, respectively. The results demonstrate that densification and control over the microstructure and properties of GFO can be achieved by optimizing T_sint.

中文翻译：

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热化学合成条件对Ga _1.9 Fe _0.1 O ₃化合物的结构和介电性能的影响

我们报告了掺铁（Fe）的氧化镓（Ga ₂ O ₃； Ga _1.9 Fe _0.1 O ₃，称为GFO）无机化合物的可调节和受控介电性能。通过改变热化学处理条件，即不同的煅烧和烧结环境，使用标准的高温固态化学反应方法合成了GFO材料。通过X射线衍射结构表征表明，GFO化合物结晶中的β-Ga ₂ ö ₃相。Fe掺杂在GFO中引起了轻微的晶格应变，这在结构分析中很明显。烧结温度的影响（T _sint）在900–1200°C的范围内变化，这一点很重要，如电子显微镜分析所揭示的那样。T _sint影响晶粒尺寸和微观结构的演变，继而影响GFO化合物的介电和电性能。能量色散X射线光谱法和作图数据证明了微结构上元素组成的均匀分布。与温度和频率有关的介电测量结果表明了特定的特征，特别是由于Ga ₂ O _3中的Fe掺杂。使用Cole–Cole曲线计算出的扩散因子和弛豫时间在0.65–0.76和10 ^–4的范围内分别。结果表明，通过优化T _sint可以实现对GFO的组织和性能的致密化和控制。