Abstract Increase of free electrons concentration and decrease of defects density are the most desirable solution for stimulating the field emission property in semiconductor nanostructures. To implement this, herein we study the field emission efficiency of Al-doped ZnO nanowire arrays with different Al doping concentration, which were prepared by a simple facile hydrothermal method. The Al doping concentration plays a very important role on the structure, morphology, photoluminescence and field emission properties of the as-assembled samples. The results indicate that Al-doped ZnO nanowire arrays with Al doping concentration of 7 at% exhibit the highest quality crystalline structure and lowest defect density relative to others samples thanks to the suitable modification of Al doping, and this led to the increase of free electrons concentration and decrease of defects density, which have an excellent field emission performance with the lower turn on field of 1.03 V/μm and higher field enhancement factor of 20658. This remarkable field emission performances of the Al-doped ZnO nanowire arrays may provide promising applications for different field emission devices.

中文翻译：

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Al 掺杂对制造 ZnO 纳米线阵列的影响：增强的场发射特性

摘要 增加自由电子浓度和降低缺陷密度是激发半导体纳米结构场发射性能最理想的解决方案。为了实现这一点，在此我们研究了具有不同 Al 掺杂浓度的 Al 掺杂 ZnO 纳米线阵列的场发射效率，这些阵列是通过简单易行的水热法制备的。Al 掺杂浓度对组装后样品的结构、形貌、光致发光和场发射特性起着非常重要的作用。结果表明，由于 Al 掺杂的适当改性，Al 掺杂浓度为 7 at% 的 Al 掺杂 ZnO 纳米线阵列相对于其他样品表现出最高质量的晶体结构和最低的缺陷密度，