Organic‐inorganic hybrid perovskite (CH₃NH₃PbX₃, X = Cl, Br or I) quantum dots (QDs) have shown superior optoelectronic properties and have been regarded as a most ideal material for next‐generation optoelectronic devices, particularly for QDs‐based light‐emitting diodes (QLEDs). However, there are only a few reports on CH₃NH₃PbX₃ QLEDs and the reported performance is still very poor, primarily due to the difficulties in the fabrication of high‐quality compact QDs thin films. In this work, an electric‐field‐assisted strategy is developed for efficient fabrication of uniform CH₃NH₃PbBr₃ QDs thin films with high photoluminescence quantum yields (PLQY, 80%–90%) from dilute CH₃NH₃PbBr₃ QDs suspensions (≈0.1 mg mL^‐1) within 5 mins. Benefited from the high‐quality CH₃NH₃PbBr₃ QDs thin films, the corresponding QLEDs deliver a highly bright green emission with maximum luminances of 12450 cd m². Furthermore, a current efficiency of 12.7 cd A^‐1, a power efficiency of 9.7 lm W^‐1, and an external quantum efficiency (EQE) of 3.2% were acheived by enhancing the hole injection. This performance represents the best results for CH₃NH₃PbBr₃ QDs‐based QLEDs reported to date. These results indicate an important progress in the fabrication of high‐performance CH₃NH₃PbX₃ QLEDs and demonstrate their huge potential for next‐generation displays and lighting.

中文翻译：

---

用于明亮发光二极管的高质量有机-无机混合钙钛矿量子点薄膜的简便组装

有机-无机杂化钙钛矿（CH ₃ NH ₃ PbX ₃，X = Cl，Br或I）量子点（QDs）具有优异的光电性能，被认为是下一代光电器件（尤其是QDs）的最理想材料基于发光二极管（QLED）。但是，关于CH ₃ NH ₃ PbX ₃ QLED的报道很少，而且报告的性能仍然很差，这主要是由于难以制造高质量的紧凑型QDs薄膜。在这项工作中，开发了一种电场辅助策略来有效地制造均匀的CH ₃ NH ₃ PbBr ₃稀释的CH ₃ NH ₃ PbBr ₃ QDs悬浮液（≈0.1mg mL ^-1）在5分钟内具有高光致发光量子产率（QQY，80％–90％）的QDs薄膜。得益于高质量的CH ₃ NH ₃ PbBr ₃ QDs薄膜，相应的QLED可发出高亮度的绿色光，最大亮度为12450 cd m ²。此外，通过增强空穴注入可以实现12.7 cd A ^-1的电流效率，9.7 lm W ^-1的功率效率和3.2％的外部量子效率（EQE）。此性能代表CH ₃ NH ₃的最佳结果迄今已报告了基于PbBr ₃ QD的QLED。这些结果表明，高性能CH ₃ NH ₃ PbX ₃ QLED的制造取得了重要进展，并证明了其在下一代显示器和照明领域的巨大潜力。