There is an increasing number of reports on polar polymer‐based ferroelectric field effect transistors (FeFETs), where the hysteresis of the drain current–gate voltage (I_d–V_g) curve is investigated as the result of the ferroelectric polarization effect. However, separating ferroelectric effect from many of the factors (such as charge injection/trapping and the presence of mobile ions in the polymer) that confound interpretation is still confusing and controversial. This work presents a methodology to reliably identify the confounding factors which obscure the polarization effect in FeFETs. Careful observation of the I_d–V_g curves, as well as monitoring the I_d–V_g hysteresis and flat band voltage shift as a function of temperature and sweep frequency, identifies the dominant mechanism. This methodology is demonstrated by using 15 nm thick high glass transition temperature polar polymer‐based FeFETs. In these devices, room temperature hysteresis is largely a consequence of charge trapping and mobile ions, while ferroelectric polarization is observed at elevated temperatures. This methodology can be used to unambiguously prove the effect of ferroelectric polarization in FeFETs.

中文翻译：

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基于极性聚合物的FET中的铁电：磁滞分析

关于基于极性聚合物的铁电场效应晶体管（FeFET）的报道越来越多，其中，由于铁电极化效应的结果，研究了漏极电流-栅极电压（I _d - V _g）曲线的滞后现象。但是，将铁电效应与混淆解释的许多因素（例如电荷注入/俘获和聚合物中存在可移动离子）相分离仍然令人困惑和争议。这项工作提出了一种方法，可以可靠地识别混淆因素，从而消除了FeFET中的极化效应。仔细观察I _d - V _g曲线，并监测I_d – V _g的磁滞和平坦带电压偏移随温度和扫描频率的变化，确定了主要的机理。通过使用15 nm厚的高玻璃化转变温度极性聚合物基FeFET证明了这种方法。在这些器件中，室温滞后很大程度上是电荷俘获和可移动离子的结果，而在升高的温度下会观察到铁电极化。该方法可用于明确证明FeFET中铁电极化的影响。