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Double-Channel Piezotronic Transistors for Highly Sensitive Pressure Sensing
ACS Nano ( IF 17.1 ) Pub Date : 2018-01-18 00:00:00 , DOI: 10.1021/acsnano.7b08447
Shuhai Liu 1 , Longfei Wang 2, 3 , Zheng Wang 4 , Yafeng Cai 5 , Xiaolong Feng 6 , Yong Qin 1, 4 , Zhong Lin Wang 2, 3, 7
Affiliation  

Piezotronic transistors (PTs) that utilize inner crystal potential generated by interface piezoelectric polarization charges as the gate voltage have great potential applications in force/pressure-triggered or controlled electronic devices, sensors, human–machine communication, and microelectromechanical systems. Although the performance of PTs has been partially enhanced by exploring special materials with different geometries or high piezoelectricity, few studies have been focused on the structure design of PT itself to more effectively enhance the performance and structural reliability. Here, an integrated double-channel plane piezotronic transistor is invented as a high-performance pressure-sensing technology. Owing to the double-channel modulation and the plane structure, the PT has the merits of high pressure sensitivity (84.2–104.4 meV/MPa) and high structural reliability, which provides the opportunity for great applications, such as human–computer interfacing, biosensing, and health monitoring.

中文翻译:

高灵敏度压力感测的双通道压电晶体管

利用由界面压电极化电荷产生的内部晶体电势作为栅极电压的压电晶体管(PT)在力/压力触发或受控电子设备,传感器,人机通信和微机电系统中具有巨大的潜在应用。尽管通过探索具有不同几何形状或高压电性的特殊材料已部分提高了PT的性能,但很少有研究集中在PT本身的结构设计上,以更有效地增强性能和结构可靠性。在此,发明了一种集成的双通道平面压电晶体管作为一种高性能的压力传感技术。由于采用了双通道调制和平面结构,PT具有高压力灵敏度的优点(84.2–104。
更新日期:2018-01-18
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