In this study, we prepared the cubic AgSnSe₂ thin film photoelectrodes on substrates using the selenization of Ag–Sn metal precursors and examined the influence of silver content in samples on their photoelectrochemical properties in the aqueous solution. With the selenization temperature kept at 410°C for 1 h in the selenization apparatus, the cubic AgSnSe₂ samples can be obtained. The results of phase characterization show that the phase change from the cubic AgSnSe₂ to the cubic Ag₈SnSe₆ phase takes place at the selenization temperature between 425 to 440 °C. The optical energy band gaps, carrier concentrations, and mobilities of samples are in the range of 1.24–1.30 eV, 1.75 × 10¹⁸–4.68 × 10¹⁹ cm⁻³, and 43–253 cm²/V/s, respectively. It was found that the sample with the [Ag]/[Ag + Sn] molar ratio of 0.48 had a maximum photo-enhancement current density of 1.26 mA/cm² at an external bias of + 1.23 V vs. the reverse hydrogen electrode in the 0.35 M Na₂S + 0.25 M K₂SO₃ aqueous solution. The electrochemical impedance spectra of samples in the aqueous solution containing S²⁻ and SO₃²⁻ ions were also employed to examine the possible reaction mechanisms taking place at the sample surfaces.

在这项研究中，我们使用Ag-Sn金属前驱物的硒化在衬底上制备了立方AgSnSe ₂薄膜光电电极，并研究了样品中银含量对其在水溶液中的光电化学性能的影响。硒化温度保持在410在硒化设备中，在1°C下放置1小时，可以得到立方AgSnSe ₂样品。相表征的结果表明，从立方AgSnSe ₂到立方Ag ₈ SnSe _6的相变发生在425至440°C的硒化温度下。样品的光能带隙，载流子浓度和迁移率分别在1.24–1.30 eV，1.75×10 ¹⁸ –4.68×10 ¹⁹  cm ^-3和43–253 cm ² / V / s的范围内。发现[Ag] / [Ag + Sn]摩尔比为0.48的样品的最大光增强电流密度为1.26 mA / cm ^2。在0.35 M Na ₂ S + 0.25 MK ₂ SO ₃水溶液中，相对于反向氢电极的外部偏压为+ 1.23V 。含有S ^2-和SO ₃ ^2-离子的水溶液中样品的电化学阻抗谱也用于检查在样品表面发生的可能的反应机理。