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Oxidation layering mechanism of graphene-like MoS 2 prepared by the intercalation-detonation method
Nano Research ( IF 9.9 ) Pub Date : 2017-07-29 00:00:00 , DOI: 10.1007/s12274-017-1713-1
Fan Yang , Kuaishe Wang , Ping Hu , Zhenyu Chen , Jie Deng , Boliang Hu , Weicheng Cao , Dongxin Liu , Geng An , Alex A. Volinsky

Graphene-like MoS2 has attracted significant interest because of its unique electronic, optical, and catalytic properties with two-dimensional lamellar structure. Three kinds of intercalated MoS2 samples were prepared using different oxidation layering methods, which are the first steps of intercalation-detonation. The oxidation layering mechanism of graphene-like MoS2 was systematically characterized using Fourier transform infrared, X-ray photoelectron, and Raman spectroscopy techniques. The bulk MoS2 sample was gradually oxidized from the edge to the interlayer in the presence of concentrated H2SO4 and KMnO4. A large number of hydroxyl groups were bonded to the sulfur atom layer, forming S–OH bonds in the basal planes of the MoS2 structure. The addition of deionized water to concentrated H2SO4 generated a large amount of heat, promoting the generation of more S–OH bonds, destroying residual Van der Waals forces between the layers, and finally stripping off parts of the flakes. The continuous addition of deionized water in the high temperature stage resulted in the largest oxidative intercalation effect. Additionally, the η factor was determined to compare the intensities of B1u and A1g peaks in the Raman spectra and quantify the effect of oxidative intercalation. The highest value of η was obtained when deionized water was added continuously during the preparation of intercalated MoS2.

中文翻译:

插层-爆轰法制备的石墨烯状MoS 2的氧化成层机理

像石墨烯的MoS 2由于具有独特的二维层状结构的电子,光学和催化特性而引起了人们的极大兴趣。使用不同的氧化分层方法制备了三种插层式MoS 2样品,这是插层-爆轰的第一步。使用傅立叶变换红外,X射线光电子和拉曼光谱技术系统地表征了石墨烯状MoS 2的氧化分层机制。在浓H 2 SO 4和KMnO 4存在下,块状MoS 2样品从边缘逐渐氧化为中间层。大量的羟基键合到硫原子层上,在MoS 2结构的基面上形成S-OH键。向浓缩的H 2 SO 4中添加去离子水会产生大量热量,从而促进了更多S-OH键的产生,破坏了层之间的残留范德华力,最后剥落了部分薄片。在高温阶段连续添加去离子水会产生最大的氧化嵌入作用。此外,确定η因子以比较拉曼光谱中B 1u和A 1g峰的强度,并量化氧化插层的影响。最高值在制备插层式MoS 2的过程中连续添加去离子水可得到η
更新日期:2018-01-12
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