Coexistence of negative differential resistance (NDR) and resistive switching (RS) memory is observed using a Ag|TiO_x|F‐doped‐SnO₂ memory cell at room temperature. Unlike other reports, the coexistence of NDR and RS strongly depends on the relative humidity levels at room temperature. The NDR disappears when the cells are placed in a dry air ambient (H₂O < 5 ppm) or in vacuum, but the coexistence emerges and gradually becomes obvious after the cells are exposed to ambient air with relative humidity of 35%, and then becomes dramatically enhanced as the relative humidity becomes higher. Due to the excellent stability and reversibility of the coexistence of NDR and RS, a multilevel RS memory is developed at room temperature. Hydroxide ion (OH⁻) is induced by gas‐phase water‐molecule splitting on the surface and interface of the memory cell. The OH⁻ interacts with oxygen vacancies and transports in the bulk of memory cell to facilitate the migration of Ag ions and oxygen vacancies along grain boundaries. These processes are responsible for the moisture‐modulated and room‐temperature coexistence. This work demonstrates moisture‐modulated coexistence of NDR and RS for the first time and gives an insight into the influence of water molecules on transition‐metal‐oxide‐based RS memory systems.

中文翻译：

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水分调节的TiOx室温下负微分电阻和电阻开关记忆的共存

在室温下，使用Ag | TiO _x | F掺杂的SnO ₂存储器可以观察到负差分电阻（NDR）和电阻开关（RS）存储器共存。与其他报告不同，NDR和RS的共存关系在很大程度上取决于室温下的相对湿度水平。当将细胞置于干燥空气环境（H ₂ O <5 ppm）或真空中时，NDR消失，但是当细胞暴露于相对湿度为35％的环境空气中后，共存出现并逐渐变得明显。随着相对湿度的升高，湿度会显着提高。由于NDR和RS共存的出色稳定性和可逆性，因此在室温下开发了多级RS存储器。氢氧根离子（OH ^-）是由存储单元表面和界面上的气相水分子分裂引起的。的OH ^-与氧空位和运输在大容量存储单元的交互，以促进银离子和氧空位的沿晶界迁移。这些过程负责水分调节和室温共存。这项工作首次证明了NDR和RS的水分调节共存，并深入了解了水分子对基于过渡金属氧化物的RS存储系统的影响。