The generation and modulation on valley and spin degrees of freedom are essential for multifunctional electronic devices. Herewith, the electronic structures in BiXO₃/BiIrO₃ (X = Fe, Mn) ferroelectric superlattices are studied by first-principles calculations with spin–orbital coupling. Different from the previous BiAlO₃/BiIrO₃ system, both valley and spin polarizations in bilayered BiIrO₃ are achieved in BiXO₃/BiIrO₃ superlattices, where the spin polarization in the valley can be engineered by the spin orientation of Fe or Mn owing to the xy-plane orbitals. Especially, the relatively parallel and antiparallel directions of ferroelectric polarization in BiFeO₃ and BiIrO₃ can switch the valley injection in BiFeO₃/BiIrO₃ superlattices. Overall, the tunable valley and spin polarizations in BiFeO₃/BiIrO₃ ferroelectric superlattices pave a way for developing nonvolatile data memories and valley–spin devices.

中文翻译：

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BiXO ₃ / BiIrO ₃（X = Fe，Mn）铁电超晶格中的可调谷和自旋极化

谷值和自旋自由度的产生和调制对于多功能电子设备至关重要。据此，通过具有自旋-轨道耦合的第一性原理计算研究了BiXO ₃ / BiIrO ₃（X = Fe，Mn）铁电超晶格中的电子结构。与以前的BiAlO ₃ / BiIrO ₃系统不同，BiXO ₃ / BiIrO ₃超晶格在双层BiI​​rO _3中都实现了谷极化和自旋极化，其中谷中的自旋极化可通过Fe或Mn的自旋取向来进行工程化。在XY平面轨道。特别是，相对平行和铁电极的在反平行的BiFeO方向₃和BiIrO ₃可以切换谷注射的BiFeO ₃ / BiIrO _3个超晶格。总体而言，BiFeO ₃ / BiIrO ₃铁电超晶格中的可调谐波谷和自旋极化为开发非易失性数据存储器和波谷自旋器件铺平了道路。