High‐performance, low‐power and enhancement‐mode ZnO nanofiber thin‐film transistors with impressive electrical characteristics, such as a small positive threshold voltage of ≈0.9 V, are demonstrated by Fukai Shan, Johnny C. Ho, and co‐workers in article number 1700336. When high‐κ AlO_x dielectrics are employed, the device operating voltage can be substantially reduced, with a 10× increase in the electron mobility, indicating the potency of these nanofibers for nextgeneration electronics.

中文翻译：

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薄膜晶体管：具有低工作电压的ZnO纳米纤维薄膜晶体管（Adv。Electron Mater。1/2018）

Fukai Shan，Johnny C. Ho和他的同事们展示了具有令人印象深刻的电特性的高性能，低功耗和增强模式的ZnO纳米纤维薄膜晶体管，例如≈0.9V的小的正阈值电压。物品编号1700336。当使用高κAlO _x电介质时，器件的工作电压可以大大降低，电子迁移率提高10倍，表明这些纳米纤维对下一代电子产品的效用。