In this work, thin film systems consisting of: (i) monolithic titanium nitride, (ii) monolithic titanium, and, (iii) titanium nitride with intercalated titanium, were fabricated on <100> P-type Si wafers by magnetron sputtering. The thin films were characterized using electron microscopy, glancing angle x-ray diffraction and nanoindentation. Their impedance response was studied via open circuit potential and electrochemical impedance spectroscopy in a sodium chloride aqueous solution. The influence of intercalated Ti thickness on impedance behavior was investigated in detail. Scanning electron microscopy analysis confirmed the columnar structure of TiN and aggregated structure of Ti thin films. Further microstructural analysis confirmed the presence of nano-porosities in thin films which explained their low modulus and hardness. Analysis of impedance data with equivalent circuit models indicated that incorporation of titanium as intercalated layer between titanium nitride and silicon surface, greatly altered the impedance characteristics of Si. Higher impedance values of thin films were achieved for bi-layer configuration at a much smaller total thickness as compared to monolithic counterparts. The increase in impedance was attributed to the presence of less defective and compact intercalated Ti layer that effectively interrupted the corrosive ions pathways.

在这项工作中，通过磁控溅射在<100> P型Si晶片上制造了由以下材料组成的薄膜系统：（i）整体氮化钛，（ii）整体钛和（iii）嵌入钛的氮化钛。使用电子显微镜，掠射角X射线衍射和纳米压痕对薄膜进行表征。通过开路电势和电化学阻抗谱在氯化钠水溶液中研究了它们的阻抗响应。详细研究了插层Ti厚度对阻抗行为的影响。扫描电子显微镜分析证实了TiN的柱状结构和Ti薄膜的聚集结构。进一步的微结构分析证实了薄膜中存在纳米孔隙，这解释了它们的低模量和硬度。用等效电路模型对阻抗数据进行分析表明，在氮化钛和硅表面之间掺入钛作为插层，大大改变了硅的阻抗特性。与单片对应物相比，双层结构在总厚度小得多的情况下实现了更高的薄膜阻抗值。阻抗的增加归因于缺陷和致密插层的Ti层较少，有效地打断了腐蚀离子通道。与单片对应物相比，双层结构在总厚度小得多的情况下实现了更高的薄膜阻抗值。阻抗的增加归因于缺陷和致密插层的Ti层较少，有效地打断了腐蚀离子通道。与单片对应物相比，双层结构在总厚度小得多的情况下实现了更高的薄膜阻抗值。阻抗的增加归因于缺陷和致密插层的Ti层较少，有效地打断了腐蚀离子通道。