Abstract This paper presents the impact of temperature and nitrogen-composition on the growth mode and crystallinity of GaAsPN alloys. Reflection high-energy electron diffraction results combined with transmission electron microscopy analysis revealed that maintaining two-dimensional (2-D) growth required higher temperatures when nitrogen composition increased. Outside the 2-D growth windows, stacking faults and micro-twins were preferentially formed at {1 1 1} B planes rather than at the {1 1 1} A planes and anomalous growth was observed. The photoluminescence spectra of GaAsPN layers implies that the higher temperature growth is effective for reducing the nitrogen-related point defects.

中文翻译：

---

温度和氮成分对 GaAsPN 合金生长的影响

摘要 本文介绍了温度和氮成分对 GaAsPN 合金生长模式和结晶度的影响。反射高能电子衍射结果结合透射电子显微镜分析表明，当氮成分增加时，维持二维 (2-D) 生长需要更高的温度。在二维生长窗口之外，堆垛层错和微孪晶优先形成在 {1 1 1} B 平面而不是 {1 1 1} A 平面，并且观察到异常生长。GaAsPN 层的光致发光光谱意味着较高的温度生长对于减少与氮相关的点缺陷是有效的。