Complementary resistive switching (CRS) is a suitable approach to minimize the sneak leakage paths through a large resistive random access memory (RRAM) array. Here, an effective CRS design with a HfO₂/Al₂O₃/TiO_x (HAT) trilayer structure integrated in a 3D vertically stacked RRAM array is reported. The design shows voltage‐controlled resistive switching and CRS performance with multilevel operations. High‐speed switching is observed with the HAT design. The device shows SET and the RESET transitions with speeds of −3.5 V@30 ns and +3.8 V@150 ns, respectively. As well as with the DC measurements, the CRS switching is achieved under AC switching dynamics measurement. Maintaining the same applied pulse polarity, the lower amplitude can switch the device to the SET and the higher amplitude can switch it to the RESET. A highly nonlinear (nonlinearity >10²) CRS is obtained at a high temperature of 150 °C. In the HAT devices, the origin of CRS is due to the anionic redistribution in HfO₂ and TiO_x layers, leaving Al₂O₃ as tunnel barrier. The achievements reported here indicate the applicability of the HAT design for future high‐speed high‐density applications.

中文翻译：

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在3D垂直堆叠的新型HfO2 / Al2O3 / TiOx（HAT）RRAM中具有多级操作的CMOS兼容，高速，高度稳定的互补开关的设计

互补电阻切换（CRS）是使通过大型电阻随机存取存储器（RRAM）阵列的潜漏路径最小化的合适方法。在这里，采用HfO ₂ / Al ₂ O ₃ / TiO _x的有效CRS设计报告了集成在3D垂直堆叠RRAM阵列中的（HAT）三层结构。该设计展示了电压控制的电阻开关和多级操作的CRS性能。使用HAT设计可以观​​察到高速开关。器件显示SET和RESET转换的速度分别为-3.5 V @ 30 ns和+3.8 V @ 150 ns。与DC测量一样，CRS开关也可以在AC开关动态测量下实现。保持相同的施加脉冲极性，较低的幅度可以将设备切换到SET，而较高的幅度可以将设备切换到RESET。在150°C的高温下可获得高度非线性（非线性> 10 ²）的CRS。在HAT装置中，CRS的起源是由于HfO ₂和TiO中的阴离子重新分布_x层，留下Al ₂ O ₃作为隧道势垒。此处报道的成就表明HAT设计在未来的高速高密度应用中的适用性。