Triboelectric nanogenerator (TENG) is an emerging green energy alternative, but the still low output power has been plagued by incomplete visualization into surface chemistry of materials. As an effective way of modifying surface chemistry for semiconductors by doping, we demonstrate that ZnO nanorod (NR) arrays doped into p-type with Sb can drastically enhance the output performance of TENG. The p-type characters of all the Sb-doped are confirmed and the hole carrier concentration is estimated to range from 2.83 × 10¹⁵ to 1.87 × 10¹⁸ cm⁻³. Surprisingly, the output voltage and current of p-type ZnO NR arrays are remarkably enhanced from undoped n-type ZnO by 24 and 5.5 times, respectively, in giving up electrons to negatively charged PDMS. Contrarily, the triboelectric output performance of ZnO NR arrays is degraded by Sb doping when rubbing against positively charged nylon. The abnormal phenomena are ascribed to the formation of electron accumulation layers upon Sb doping through substitution of Zn⁺² with Sb⁺³, resulting in surface downward band bending to render as n-type characteristics. This work has demonstrated a viable method to enable ZnO tunable in the relative position of the triboelectric series, in facilitation of designing high output power TENGs.

摩擦电纳米发电机（TENG）是新兴的绿色能源替代品，但由于材料表面化学的不完全可视化，仍然困扰着仍然较低的输出功率。作为通过掺杂修饰半导体表面化学的有效方法，我们证明了用Sb掺杂为p型的ZnO纳米棒（NR）阵列可以大大提高TENG的输出性能。确认所有Sb掺杂的p型特征，并且空穴载流子浓度估计在2.83×10 ¹⁵至1.87×10 ¹⁸  cm ^{-3的范围内}。出乎意料的是，p型ZnO NR阵列的输出电压和电流从未掺杂的n型ZnO分别显着提高了24倍和5.5倍，从而将电子释放给带负电的PDMS。相反，当与带正电的尼龙摩擦时，Sb掺杂会降低ZnO NR阵列的摩擦电输出性能。异常现象归因于通过用Sb ⁺³取代Zn ⁺²而在Sb掺杂时形成电子积累层，从而导致表面向下的能带弯曲而呈现n型特性。这项工作证明了可行的方法，可以使ZnO在摩擦电系列的相对位置可调，从而有助于设计高输出功率TENG。