Although chemical vapor deposition (CVD)-grown carbon nanotube (CNT) arrays are considered ideal materials for constructing high-performance field-effect transistors (FETs) and integrated circuits (ICs), a significant gap remains between the required and achieved densities and purities of CNT arrays. Here, we develop a directional shrinking transfer method to realize up to 10-fold density amplification of CNT array films without introducing detectable damage or defects. In addition, the method improves the film uniformity while retaining the perfect alignment and high carrier mobility of 1600 cm² V^–1 s^–1 of CVD-grown CNT arrays. By combining the density amplification method with the thermocapillary flow method developed by Rogers et al., semiconducting CNT arrays with high densities and high qualities are obtained. High-performance FETs with a channel length of 200 nm are demonstrated using these high-density semiconducting CNT arrays, yielding a record-high on-state current density of 150 μA/μm, a peak transconductance of 80 μS/μm, and a current on/off ratio of more than 10⁴ among the CVD-grown CNT-based FETs.

中文翻译：

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用于高性能场效应晶体管的高密度半导体碳纳米管阵列的可扩展制备

尽管化学气相沉积（CVD）生长的碳纳米管（CNT）阵列被认为是构造高性能场效应晶体管（FET）和集成电路（IC）的理想材料，但在所需的密度和纯度之间仍然存在巨大差距的CNT阵列。在这里，我们开发了一种定向收缩转移方法，以实现CNT阵列膜密度提高10倍，而不会引入可检测到的损坏或缺陷。另外，该方法在保持CVD生长的CNT阵列的1600 cm ² V ^–1 s ^–1的完美对准和高载流子迁移率的同时，改善了膜的均匀性。通过将密度放大法与罗杰斯等人开发的热毛细管流动法相结合由此，获得了具有高密度和高质量的半导体CNT阵列。使用这些高密度半导体CNT阵列演示了具有200 nm沟道长度的高性能FET，其创纪录的导通状态电流密度为150μA/μm，峰值跨导为80μS/μm，并且电流在CVD生长的CNT基FET中，开/关比大于10 ⁴。