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On possible reactions between boron carbide and silicon at elevated temperatures
Materials Letters ( IF 3 ) Pub Date : 2018-04-01 , DOI: 10.1016/j.matlet.2018.01.028
Andrey Yurkov , Anton Naschokin , Artem Malakho , Victor Avdeev

Abstract Ternary compounds like B5SiC2 and B3Si2C2 as products of reaction between B4C and silicon were proposed to exist in early investigations. According to the recent publications the products of high temperature reaction are SiC and the ternary phase(s) BxCyCz. The crystals of the newly appearing ternary phase(s) have relatively big dimensions (10–20 μm), rather strict crystal facets. Twinning may be frequent for these phases. According to energy dispersive and wavelength dispersive spectroscopy the composition of these crystals tends to B3Si2C2, their diffraction lines are similar to those of BxSiyCz phase, described earlier.

中文翻译:

关于碳化硼和硅在高温下可能发生的反应

摘要 在早期的研究中提出了三元化合物,如 B5SiC2 和 B3Si2C2 作为 B4C 与硅反应的产物。根据最近的出版物,高温反应的产物是 SiC 和三元相 BxCyCz。新出现的三元相晶体尺寸较大(10-20 μm),晶面较为严格。这些阶段可能经常出现孪生。根据能量色散和波长色散光谱,这些晶体的组成趋向于 B3Si2C2,它们的衍射线类似于前面描述的 BxSiyCz 相的衍射线。
更新日期:2018-04-01
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