Abstract This paper reports the growth of zinc blende (ZB) MgS on GaAs (2 1 1)B substrates by molecular beam epitaxy. Initial growths of (2 1 1)B ZnSe were performed at 240 °C and showed to be of comparable quality to (1 0 0) ZnSe grown at the same temperature. Samples of MgS deposited on ZnSe buffers showed good quality 2D growth. Subsequently, multilayer structures of ZnSe and ZnCdSe were deposited on (2 1 1)B MgS layers for structural and optical examination before and after epitaxial lift off (ELO). Photoluminescence (PL) spectroscopy showed strong emission before and after ELO and X-ray spectra demonstrated the presence of a single continuous zinc blende phase.

中文翻译：

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GaAs (211)B 衬底上闪锌矿 MgS 的分子束外延生长

摘要 本文报道了通过分子束外延在 GaAs (2 1 1)B 衬底上生长闪锌矿 (ZB) MgS。(2 1 1)B ZnSe 的初始生长在 240 °C 下进行，并且显示出与在相同温度下生长的 (1 0 0) ZnSe 质量相当。沉积在 ZnSe 缓冲液上的 MgS 样品显示出良好的二维生长质量。随后，ZnSe 和 ZnCdSe 的多层结构沉积在 (2 1 1)B MgS 层上，用于外延剥离 (ELO) 之前和之后的结构和光学检查。光致发光 (PL) 光谱在 ELO 和 X 射线光谱证明存在单个连续闪锌矿相之前和之后显示出强烈的发射。