A novel push-pull oligomeric semiconductor, ENBT based on naphthodithiophene-benzothiodiazole was successfully designed and synthesized. ENBT was fully characterized by ¹H NMR, MS, thermogravimetric analysis (TGA), UV–vis spectra, and cyclic voltammetry (CV). Furthermore, ENBT-based OFETs were fabricated by solution-processed dip-coating technique and its charge transporting property was investigated. The film of ENBT exhibited a hole mobility as high as 1.4 × 10⁻² cm²/(Vs) with a current on/off ratio of 10⁶–10⁷ after annealed at 160 °C. In order to give an insight to the transporting property of ENBT films, thin film morphologies after annealing at different temperatures were also studied by atomic force microscopy (AFM).

成功设计并合成了一种基于萘二噻吩-苯并噻二唑的新型推挽式低聚半导体ENBT。ENBT已通过¹ H NMR，MS，热重分析（TGA），UV-vis光谱和循环伏安法（CV）进行了全面表征。此外，通过溶液浸涂技术制备了基于ENBT的OFET，并研究了其电荷传输性能。ENBT薄膜在160°C退火后，其空穴迁移率高达1.4×10 ^-2  cm ² /（Vs），电流开/关比为10 ⁶ –10 ⁷。为了深入了解还通过原子力显微镜（AFM）研究了ENBT薄膜，在不同温度下退火后的薄膜形貌。