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Epitaxy of obliquely aligned GaN nanorods on vertically oriented graphene nanosheets for transparent flexible piezoelectric nanogenerators
Carbon ( IF 10.9 ) Pub Date : 2018-04-01 , DOI: 10.1016/j.carbon.2017.12.118
Shu-Ju Tsai , Chung-Lin Wu , Nien-Ting Tsai , Sheng-Shong Wong , Li-Wei Tu

Abstract Transparent flexible piezoelectrics are important for a variety of applications, including piezoelectric transistors, nanogenerators, self-powered nano/biosensors, and piezo-phototronic effect enhanced solar cells and light-emitting diodes. Moreover, obliquely aligned nanorods (NRs) maximize NR deformation, enhancing the piezoelectric potential for applications involving piezoelectric, piezotronic, and piezo-phototronic effects. However, directly transferring one-dimensional semiconductor arrays onto transparent flexible substrates has been challenging. Herein, we report an efficient approach for growing and transferring a large area of obliquely aligned single-crystalline GaN NRs using vertically oriented graphene (VG) nanosheets. We demonstrated the high performance of transparent flexible vertically integrated nanogenerators (VINGs) embedded within the transferred obliquely aligned GaN NRs. The results indicated that nanocrystalline graphene was an excellent platform to epitaxy and transfer high-quality II-VI and III-V nanostructures for flexible, three-dimensional stacked electronics and to enhance the piezoelectric, piezotronic, and piezo-phototronic performance of piezoelectric nanostructure-based devices.

中文翻译:

用于透明柔性压电纳米发电机的垂直取向石墨烯纳米片上倾斜排列的 GaN 纳米棒的外延

摘要 透明柔性压电材料对各种应用都很重要,包括压电晶体管、纳米发电机、自供电纳米/生物传感器、压电光电效应增强太阳能电池和发光二极管。此外,倾斜排列的纳米棒 (NRs) 使 NR 变形最大化,增强了涉及压电、压电和压电光电子效应应用的压电潜力。然而,将一维半导体阵列直接转移到透明柔性基板上一直具有挑战性。在此,我们报告了一种使用垂直取向的石墨烯 (VG) 纳米片生长和转移大面积倾斜排列的单晶 GaN NR 的有效方法。我们展示了嵌入在转移的倾斜对齐的 GaN NR 中的透明柔性垂直集成纳米发电机 (VING) 的高性能。结果表明,纳米晶石墨烯是外延和转移高质量 II-VI 和 III-V 纳米结构的绝佳平台,可用于柔性三维堆叠电子设备,并增强压电纳米结构的压电、压电和压电光电子性能-基于设备。
更新日期:2018-04-01
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