Abstract The theory of polylayer growth of thin solid films is employed for description of the growth kinetics of single-crystal nanowires. Expressions are derived for the dependences of the height h and radius r of a given nanowire on time t, as well as for the h(r) dependence. These dependences are applicable immediately after the nanowire nucleation on the substrate and thus include the period during which the nucleated nanowire changes its shape from that of cap to that of column. The analysis shows that the nanowire cap-to-column shape transition is continuous and makes it possible to kinetically define the nanowire shape-transition radius by means of the nanowire radial and axial growth rates. The obtained h(t), r(t) and h(r) dependences are found to provide a good description of available experimental data for growth of self-nucleated GaN nanowires by the vapor-solid mechanism.

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从薄膜多层生长理论的角度看纳米线生长

摘要 利用固体薄膜的多层生长理论来描述单晶纳米线的生长动力学。推导出给定纳米线的高度 h 和半径 r 对时间 t 的依赖性以及 h(r) 依赖性的表达式。这些相关性在衬底上的纳米线成核之后立即适用，因此包括成核纳米线的形状从帽状变为柱状的时期。分析表明，纳米线帽到柱的形状转变是连续的，并且可以通过纳米线径向和轴向生长速率动态定义纳米线形状转变半径。得到的h(t)，