n-Channel organic light-emitting field-effect transistors (OLETs) based on perylene diimide (PDI-C13) with improved air stability were fabricated using a short channel length and thermal annealing. Both shortening of channel length and thermal annealing improved source–drain current; thermal annealing facilitated charge injection and improved PLQY of the PDI-C13 film. The light-emitting mechanism of OLETs was elaborated: that is, the OLETs were lateral organic light-emitting diodes in nature, the gate voltage (V_GS) modulated light intensity by controlling electron density, and the light intensity was a quadratic function of V_GS. This is the first example of n-channel OLETs that can operate in air.

中文翻译：

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具有高迁移率和改善的空气稳定性的n型有机发光晶体管†

使用短沟道长度和热退火工艺制造了基于air二酰亚胺（PDI-C13）的具有增强的空气稳定性的n沟道有机发光场效应晶体管（OLET）。沟道长度的缩短和热退火都改善了源极-漏极电流。热退火促进了电荷注入并改善了PDI-C13膜的PLQY。阐述了OLETs的发光机理：即OLETs本质上是横向有机发光二极管，栅极电压（V _GS）通过控制电子密度来调制光强，而光强是V的二次函数。_GS。这是可以在空中运行的n通道OLET的第一个示例。