Controllable and repeatable crystal imperfection modulation engineering (CIME) is important for the development of semiconductor science and technology. However, for wide band gap semiconductors (WBGSs), there still lacks universal and reliable CIME. Here, based on the general idea of chemical composition complete expression design, a well‐designed, repeatable, and feasible CIME for ZnO is introduced, making free modulation of carrier in WBGS become possible. Briefly, this extraordinary CIME is dominated by two innovative procedures: an electrochemical doping and a strong oxidizing atmosphere annealing. The proposed CIME is a repeatable and universal carrier modulation project, which holds technological promise for various WBGS‐based semiconductor devices. Benefiting from this CIME, an α particle detector which operating at a high electric field of 10⁷ V cm⁻¹ can be fabricated successfully.

中文翻译：

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用于宽带隙半导体辐射检测器功能化的晶体缺陷调制工程

可控和可重复的晶体缺陷调制工程（CIME）对于半导体科学和技术的发展很重要。但是，对于宽带隙半导体（WBGS），仍然缺乏通用和可靠的CIME。在此，基于化学成分完全表达设计的总体思路，介绍了一种设计良好，可重复且可行的ZnO CIME，从而使WBGS中载流子的自由调节成为可能。简而言之，这种非凡的CIME主要由两个创新程序控制：电化学掺杂和强氧化气氛退火。拟议中的CIME是一个可重复的通用载波调制项目，对各种基于WBGS的半导体器件都具有技术前景。受益于此CIME，可以成功制造⁷ V cm ^-1。