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Electrical switching behaviour of a metalloporphyrin in Langmuir-Blodgett film
Organic Electronics ( IF 3.2 ) Pub Date : 2017-12-30 , DOI: 10.1016/j.orgel.2017.12.038
Bapi Dey , Sekhar Chakraborty , Santanu Chakraborty , Debajyoti Bhattacharjee , Inamuddin , Anish Khan , Syed Arshad Hussain

Here we report the resistive switching behaviour of an water soluble anionic metalloporphyrin 5,10,15,20-Tetrakis(4-sulfonatophenyl)-21H,23H-porphine manganese(III) chloride (MnTPPS) assembled onto spin coated as well as in Langmuir-Blodgett (LB) film. To prepare LB film, water soluble MnTPPS molecules were incorporated into monolayers of two cationic matrix molecules Octadecyltrimethylammonium bromide (OTAB) and N-Cetyl-N,N,N, trimethyl ammonium bromide (CTAB) through electrostatic interaction. Successful incorporation of MnTPPS molecules into the matrix (OTAB/CTAB) monolayers has been confirmed by measuring π – A isotherm, π – t curve and BAM investigations at air-water interface. From I – V characteristic it was found that by adjusting the measurement protocols (compliance current, sweeping direction) all the devices fabricated by using spin coated as well as LB films exhibit outstanding bipolar switching and threshold switching behaviour at room temperature. Presence of electron acceptor groups (SO3H) and π – electron clouds on the MnTPPS molecules mainly play the crucial role for such observed switching behaviour onto ultrathin films. This type of bipolar memory switching and threshold switching in a single device is technologically very important to use as an active component for the non-volatile information storage and future optoelectronics devices.



中文翻译:

Langmuir-Blodgett膜中金属卟啉的电开关行为

在这里,我们报告组装到旋涂以及在Langmuir上的水溶性阴离子金属卟啉5,10,15,20-四(4-磺酰基苯基)-21H,23H-卟啉锰(III)的电阻转换行为-Blodgett(LB)电影。为了制备LB膜,将水溶性MnTPPS分子通过静电相互作用掺入两个阳离子基质分子的十八烷基三甲基溴化铵(OTAB)和N-十六烷基-N,N,N,三甲基溴化铵(CTAB)的单层中。通过测量π–等温线,π– t曲线和在空气-水界面的BAM研究,证实了MnTPPS分子已成功整合到基质(OTAB / CTAB)单层中。从I–V特性中发现,通过调整测量协议(合规电流,扫描方向),所有使用旋涂和LB膜制造的器件在室温下均表现出出色的双极性开关和阈值开关性能。存在电子受体基团(SOMnTPPS分子上的3 H)和π–电子云对这种观察到的超薄膜开关行为起着至关重要的作用。单个设备中的这种类型的双极存储器切换和阈值切换在技术上非常重要,以用作非易失性信息存储和未来的光电设备的有源组件。

更新日期:2017-12-30
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