Present work has focused on the development of bio-organic hybrid materials based on hydrophobic DNA-complex incorporated in polymer and the study of charge transport properties across the junction formed by sandwiching it between conducting electrodes (called hetero-structured vertical diode). The inclusion of hydrophilic DNAs, both natural DNA and synthetic DNA (single strand DNA, ss-DNA and double strand DNA, ds-DNA), in organic semiconducting polymer specially regioregular poly (3, 3‴-didodecylquarterthiophene) (rr-PQT-12), have done in chloroform. Prior to DNAs inclusion, hydrophobic DNA-DDAB complexes have formed by reaction of hydrophilic DNA and didodecyldimethylammonium bromide, DDAB in aqueous solvent. Thereafter, as-mixed solution has been aged for 45 min to obtain fibrils' growth and used for the fabrication of devices. Various parameters including rectification ratio, ideality factor, saturation current, barrier height and device stability have been measured to study the nature of charge transport and effect of DNAs on the performance of devices. The device performance has been observed better with the incorporation of G-C rich DNAs. ds-DNA based devices exhibit improved rectification ratio i.e. two times higher than that of ss-DNA and three times higher than that of rr-PQT-12 with least turn-on voltage (0.56 V) or even low ideality factor (3.02), due to hot carrier injection phenomenon by assembled rr-PQT-12 to nearby nucleotide bases.

目前的工作集中在基于掺入聚合物中的疏水性DNA复合物的生物有机杂化材料的开发以及通过将其夹在导电电极之间（称为异质结构垂直二极管）而形成的跨结的电荷传输性质的研究。在有机半导体聚合物中特别是区域规则的聚（3，3′-二十二烷基四噻吩）（rr-PQT-）中包含天然DNA和合成DNA（单链DNA，ss-DNA和双链DNA，ds-DNA）的亲水性DNA。 12），在氯仿中做过。在包含DNA之前，疏水性DNA-DDAB复合物是通过亲水性DNA与十二烷基二甲基溴化铵DDAB在水性溶剂中的反应形成的。此后，将混合溶液老化45分钟以获得原纤维的生长，并将其用于制造器件。测量了各种参数，包括整流比，理想因子，饱和电流，势垒高度和器件稳定性，以研究电荷传输的性质以及DNA对器件性能的影响。通过引入富含GC的DNA，可以更好地观察设备性能。基于ds-DNA的器件在最小开启电压（0.56 V）或什至是低理想因子（3.02）的情况下，显示出更高的整流比，即比ss-DNA的两倍高，比rr-PQT-12的三倍高，由于通过将rr-PQT-12组装到附近的核苷酸碱基而产生了热载流子注入现象。通过引入富含GC的DNA，可以更好地观察到设备性能。基于ds-DNA的器件在最小开启电压（0.56 V）或什至是低理想因子（3.02）的情况下，显示出更高的整流比，即比ss-DNA的两倍高，比rr-PQT-12的三倍高，由于通过将rr-PQT-12组装到附近的核苷酸碱基而产生了热载流子注入现象。通过引入富含GC的DNA，可以更好地观察到设备性能。基于ds-DNA的器件在最小开启电压（0.56 V）或什至是低理想因子（3.02）的情况下，显示出更高的整流比，即比ss-DNA的两倍高，比rr-PQT-12的三倍高，由于通过将rr-PQT-12组装到附近的核苷酸碱基而产生了热载流子注入现象。