Abstract This paper aims to clarify the effect of oxygen on dislocation multiplication in silicon single crystals grown by the Czochralski and floating zone methods using numerical analysis. The analysis is based on the Alexander–Haasen–Sumino model and involves oxygen diffusion from the bulk to the dislocation cores during the annealing process in a furnace. The results show that after the annealing process, the dislocation density in silicon single crystals decreases as a function of oxygen concentration. This decrease can be explained by considering the unlocking stress caused by interstitial oxygen atoms. When the oxygen concentration is 7.5 × 1017 cm−3, the total stress is about 2 MPa and the unlocking stress is less than 1 MPa. As the oxygen concentration increases, the unlocking stress also increases; however, the dislocation velocity decreases.

中文翻译：

---

氧对硅晶体中位错增殖的影响

摘要 本文旨在通过数值分析阐明氧对通过直拉法和浮区法生长的硅单晶中位错倍增的影响。该分析基于 Alexander-Haasen-Sumino 模型，涉及在炉中退火过程中氧从体块扩散到位错核心。结果表明，在退火过程后，硅单晶中的位错密度随氧浓度而降低。这种减少可以通过考虑间隙氧原子引起的解锁应力来解释。当氧浓度为 7.5 × 1017 cm−3 时，总应力约为 2 MPa，解锁应力小于 1 MPa。随着氧气浓度的增加，解锁应力也随之增加；然而，