Abstract Externally induced strain effect was investigated in GaAs thin-film solar cells by electroluminescence (EL) imaging method. The strained regions demonstrated not only enhancement of local EL intensity but also redshift of the EL emission peaks. The observations were explained well by a gradient quantum-well (GQW) model correlated with tensile strain in the GaAs thin films. External biaxial strain was considered in this model which was accordingly obtained from the energy shift of the EL spectra. Finally, the spatially resolved strain in GaAs thin-film solar cells was obtained from the EL images by relating the EL emission intensity to the shift of the EL spectra. This work provides a potential standard method for diagnosis of externally induced strain in thin-film solar cells by EL measurements.

中文翻译：

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通过电致发光成像获取 GaAs 薄膜太阳能电池中外部诱导的空间分辨应变

摘要 采用电致发光（EL）成像方法研究了GaAs薄膜太阳能电池的外致应变效应。应变区域不仅表现出局部 EL 强度的增强，而且还表现出 EL 发射峰的红移。通过与 GaAs 薄膜中的拉伸应变相关的梯度量子阱 (GQW) 模型很好地解释了观察结果。在该模型中考虑了外部双轴应变，其因此从 EL 光谱的能量偏移中获得。最后，通过将 EL 发射强度与 EL 光谱的位移相关联，从 EL 图像中获得 GaAs 薄膜太阳能电池中的空间分辨应变。这项工作为通过 EL 测量诊断薄膜太阳能电池中的外部诱导应变提供了一种潜在的标准方法。