We report the fabrication of titanium nitride (TiN) films with the “best” plasmonic behavior reported so far by the pulsed laser deposition method. Even though the deposition is done at room temperature (∼25 °C) and grown on an amorphous native oxide of a silicon wafer, the plasmonic property of the TiN is comparable to that of gold, which is a conventional plasmonic material in the visible to near-infrared region. Because of the highly plasmonic nature of the TiN, the near field around the TiN nanostructure can be as high as that of a gold nanostructure. A room-temperature process without a strict requirement on the substrate allows depositing a TiN film even on a flexible polymer film without degrading its property. Our results pave the way for using TiN as a truly practical plasmonic material, replacing the use of noble metals.

中文翻译：

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等离子应用的脉冲激光沉积法制备高金属TiN薄膜

我们报道了迄今为止通过脉冲激光沉积法报道的“最佳”等离子行为的氮化钛（TiN）膜的制造。即使沉积是在室温（〜25°C）下完成并在硅晶片的非晶天然氧化物上生长的，TiN的等离子体性能也可与金相媲美，而金是可见光下的常规等离子体材料。近红外区。由于TiN的高度等离子体性质，TiN纳米结构周围的近场可能与金纳米结构的近场一样高。在基板上没有严格要求的室温工艺允许甚至在柔性聚合物膜上沉积TiN膜而不会降低其性能。我们的研究结果为将TiN用作真正实用的等离子体材料铺平了道路，从而取代了贵金属的使用。