Here, the preparation of transparent amorphous oxide semiconductor (AOS) films with unprecedented conductivity via an optimized activation process under hydrogen atmosphere for applications in solution‐processed large‐area optoelectronics is reported. Owing to their high cost and mechanical vulnerability, conventional vacuum‐processed indium–tin oxide (ITO) electrodes are inappropriate for use in next‐generation flexible and wearable electronic devices and systems. As an alternative to the ITO electrodes, solution‐processed AOS films, such as a‐IZO and a‐ZITO, with an optimized composition and postreduction treatment under hydrogen show the highest electrical conductivity of ≈300 S cm⁻¹ and a high optical transmittance of over 90% at 550 nm. The microstructures and electrical properties of these AOS films are also studied in order to determine the optimized chemical composition and postreduction conditions. It is found that a controlled hydrogen reduction treatment of AOS films is critical for achieving high electrical conductivity by suppressing the surface morphology degradation and grain boundary disconnection. Furthermore, the a‐IZO transparent conductive electrodes are successfully implemented for high efficiency organic photovoltaic cells based on the PTB7/PC₇₁BM active layers. This technique promises the low‐cost fabrication of high mobility and/or conductive AOSs for their applications in large‐area transparent and flexible optoelectronics.

中文翻译：

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用于柔性透明导电电极的溶液处理非晶氧化物半导体的优化活化

在这里，据报道通过氢气氛下的优化活化工艺制备了具有空前导电性的透明非晶氧化物半导体（AOS）膜，用于溶液加工的大面积光电子学中。由于其高成本和机械脆弱性，常规真空处理的铟锡氧化物（ITO）电极不适合在下一代柔性和可穿戴电子设备和系统中使用。作为替代ITO电极，溶液处理的AOS膜，例如一个-IZO和一个-ZITO，用氢气下一个优化的组合物和治疗postreduction显示≈300小号厘米的最高电导率^-1在550 nm处具有超过90％的高透光率。为了确定最佳的化学组成和还原后的条件，还研究了这些AOS薄膜的微观结构和电性能。已经发现，通过抑制表面形态退化和晶界断开，受控的AOS膜氢还原处理对于实现高电导率至关重要。此外，基于PTB7 / PC ₇₁ BM有源层的a- IZO透明导电电极已成功用于高效有机光伏电池。这项技术有望以低成本制造高迁移率和/或导电AOS，用于其在大面积透明和柔性光电中的应用。