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Effects of Grain Boundary Density on the Gas Sensing Properties of Triethylsilylethynyl‐Anthradithiophene Field‐Effect Transistors
Advanced Materials Interfaces ( IF 5.4 ) Pub Date : 2017-12-21 , DOI: 10.1002/admi.201701399
Yena Seo 1 , Jung Hun Lee 2 , John E. Anthony 3 , Ky V. Nguyen 1 , Yeon Hoo Kim 2 , Ho Won Jang 2 , Sunglim Ko 4 , Younghoon Cho 5 , Wi Hyoung Lee 1
Affiliation  

In this study, triethylsilylethynyl‐anthradithiophene (TES‐ADT) films with different density of grain boundaries are used for systematic investigation of effects of grain boundary density on gas sensing properties of TES‐ADT field‐effect transistors (FETs). Grain boundary density is simply controlled by changing mixing time of TES‐ADT solution. Higher mixing time leads to higher grain boundary density, and field‐effect mobility decreases with increased grain boundary density. However, gas sensing properties exhibit the opposite behavior. Drain current and field‐effect mobility of FETs based on TES‐ADT film with higher grain boundary density increase much more upon exposure of NO2 with electron withdrawing character. In addition, dynamic gas sensing tests reveal that response rate and sensitivity of a TES‐ADT sensor are enhanced remarkably by an increase of grain boundary density in TES‐ADT films. Grain boundaries provide a pathway for diffusion of gas molecules into channel regions and thus increase of grain boundary density is beneficial for development of highly sensitive OFET gas sensors.

中文翻译:

晶界密度对三乙基甲硅烷基乙炔基-蒽噻吩场效应晶体管的气敏特性的影响

在这项研究中,使用具有不同晶界密度的三乙基甲硅烷基乙炔基-蒽噻吩(TES-ADT)膜来系统研究晶界密度对TES-ADT场效应晶体管(FET)的气敏特性的影响。通过改变TES‐ADT溶液的混合时间,可以简单地控制晶界密度。较高的混合时间导致较高的晶界密度,并且场效应迁移率随晶界密度的增加而降低。但是,气体感测特性表现出相反的行为。当暴露于NO 2时,具有更高晶界密度的基于TES‐ADT薄膜的FET的漏极电流和场效应迁移率会增加更多具有吸电子特性。此外,动态气体传感测试表明,TES-ADT薄膜中晶界密度的增加显着提高了TES-ADT传感器的响应速度和灵敏度。晶界提供了气体分子扩散到通道区域的途径,因此晶界密度的增加对于开发高灵敏度的OFET气体传感器是有益的。
更新日期:2017-12-21
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