We demonstrated high responsivity metal–semiconductor–metal (MSM) solar-blind photodetectors by integrating exfoliated β-Ga₂O₃ microlayers with graphene, which is a deep ultraviolet (UV) transparent and conductive electrode. Photodetectors with MSM structures commonly suffer from low responsivity, although they feature a facile fabrication process, low dark current, and fast response speed. The β-Ga₂O₃ MSM solar-blind photodetectors with graphene electrodes exhibited excellent operating characteristics including higher responsivity (∼29.8 A/W), photo-to-dark current ratio (∼1 × 10⁶%), rejection ratio (R_254nm/R_365nm, ∼9.4 × 10³), detectivity (∼1 × 10¹² Jones), and operating speed to UV-C wavelengths, compared with MSM photodetectors with conventional metal electrodes. Absence of shading by the integration of graphene with β-Ga₂O₃ allows maximum exposure to the incident photons, suggesting a great potential for deep UV optoelectronic applications.

中文翻译：

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高响应的β-Ga ₂ ö ₃金属-半导体-金属太阳能盲光电探测器紫外透明石墨电极

我们证实高响应性的金属-半导体-金属（MSM）太阳能盲光电检测器通过集成薄片的β-Ga ₂ ö ₃与石墨烯，其为深紫外线（UV）透明且导电的电极微层。具有MSM结构的光电探测器通常具有响应速度低的缺点，尽管它们具有制造过程简单，暗电流低和响应速度快的特点。所述的β-Ga ₂ ö ₃与石墨烯电极MSM太阳能盲光电检测器表现出优异的操作特性，包括更高的响应度（~29.8 A / W），光-暗电流比（〜1×10 ⁶％），抑制比（ř _254nm / R _365nm，约9.4×10³），与传统金属电极的MSM光电探测器相比，探测灵敏度（〜1×10 ¹² Jones）和对UV-C波长的工作速度。由积分石墨烯用的β-Ga阴影的缺席₂ ö ₃允许最大的暴露于入射光子，表明深UV光电子应用的巨大潜力。