The corrosion behavior of Mo₃Si single crystals with crystallographic orientations 〈100〉, 〈110〉 and 〈111〉 in 0.5 M H₂SO₄ was analyzed using potentiodynamic polarization curves, electrochemical impedance spectrosopy, and electrochemical noise measurement. The corrosion behavior was different for each crystal orientation. The plane most susceptible to both uniform and localized types of corrosion was the (111) plane; the (110) plane exhibited the lowest susceptibility to uniform corrosion; and the (100) plane was the least susceptible to localized corrosion. These results were explained by differences in surface energy and the number of atoms per unit area.

使用电位动力学极化曲线，电化学阻抗谱和电化学噪声测量分析了晶体取向为<100>，<110>和<111>的Mo ₃ Si单晶在0.5 MH ₂ SO ₄中的腐蚀行为。每种晶体取向的腐蚀行为都不同。（111）平面是最容易受到均匀和局部腐蚀的平面。（110）平面表现出最低的均匀腐蚀敏感性；（100）平面最不容易受到局部腐蚀。这些结果可以通过表面能和单位面积原子数的差异来解释。